IXTU4N60P IXYS, IXTU4N60P Datasheet - Page 4

• Manufacturer Part Number: IXTU4N60P
• Manufacturer: IXYS

Specifications of IXTU4N60P

• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 4.0
• Rds(on), Max, Tj=25°c, (?): 2
• Ciss, Typ, (pf): 635
• Qg, Typ, (nc): 13
• Trr, Typ, (ns): 500
• Pd, (w): 89
• Rthjc, Max, (k/w): 1.41
• Package Style: TO-251

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
5.4
4.8
4.2
3.6
2.4
1.8
1.2
0.6
14
12
10
10
6
3
0
8
6
4
2
0
1
0.4
4
0
f = 1MHz
4.5
5
0.5
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
T
Fig. 9. Source Current vs.
Source-To-Drain Voltage
J
10
=125
T
5
J
-40
25
= 125
0.6
º
º
º
V
V
C
15
C
C
V
G S
S D
5.5
D S
º
C
- Volts
- Volts
0.7
20
- Volts
6
25
0.8
C iss
C oss
C rss
6.5
30
T
J
0.9
= 25
7
35
º
C
7.5
40
1
10.00
1.00
0.10
0.01
10
10
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0.01
0
Fig. 13. Maxim um Transient Therm al
0
T
J
V
I
I
= -40
D
G
125
DS
25
= 2A
= 10mA
2
Fig. 8. Transconductance
1
º
º
= 300V
0.1
º
C
C
C
Fig. 10. Gate Charge
Pulse Width - milliseconds
IXTA4N60P IXTP4N60P
IXTU4N60P IXTY4N60P
Q
4
2
Resistance
G
I
- nanoCoulombs
D
1
- Amperes
6
3
8
4
10
10
5
100
12
6
1000
14
7