IXTA1N80P IXYS, IXTA1N80P Datasheet - Page 4

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IXTA1N80P

Manufacturer Part Number
IXTA1N80P
Description
Manufacturer
IXYS
Datasheet

Specifications of IXTA1N80P

Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
1.0
Rds(on), Max, Tj=25°c, (?)
14
Ciss, Typ, (pf)
250
Qg, Typ, (nc)
9.0
Trr, Typ, (ns)
700
Pd, (w)
42
Rthjc, Max, (k/w)
3.0
Package Style
TO-263
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1,000
100
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
0.40
2.5
0
0.45
f
= 1 MHz
3.0
5
Fig. 9. Forward Voltage Drop of
0.50
3.5
10
Fig. 7. Input Admittance
0.55
Fig. 11. Capacitance
T
J
= 125ºC
Intrinsic Diode
4.0
15
0.60
V
V
V
DS
GS
SD
T
0.65
4.5
20
- Volts
J
- Volts
- Volts
= 125ºC
- 40ºC
25ºC
0.70
5.0
25
0.75
5.5
30
0.80
C iss
C oss
C rss
T
J
= 25ºC
6.0
35
0.85
0.90
6.5
40
10.0
1.0
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
0.0001
9
8
7
6
5
4
3
2
1
0
0.0
0
V
I
I
D
G
DS
= 0.5A
= 1mA
1
Fig. 12. Maximum Transient Thermal
0.2
= 400V
0.001
2
Fig. 8. Transconductance
0.4
IXTA1N80P
IXTU1N80P
Fig. 10. Gate Charge
Pulse Width - Seconds
3
Q
G
0.01
I
Impedance
- NanoCoulombs
D
0.6
- Amperes
4
0.8
5
0.1
T
6
J
= - 40ºC
IXTP1N80P
IXTY1N80P
1.0
7
IXYS REF: T_1N80P(1A)02-10-09-A
1
25ºC
125ºC
1.2
8
1.4
10
9

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