IXTM6N90A IXYS, IXTM6N90A Datasheet

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IXTM6N90A

Manufacturer Part Number
IXTM6N90A
Description
High Voltage Power MOSFETs (>1200V)
Manufacturer
IXYS
Datasheet

Specifications of IXTM6N90A

Vdss, Max, (v)
900
Id(cont), Tc=25°c, (a)
6
Rds(on), Max, Tj=25°c, (?)
1.4
Ciss, Typ, (pf)
2600
Qg, Typ, (nc)
88
Trr, Typ, (ns)
900
Pd, (w)
180
Rthjc, Max, (k/w)
0.7
Package Style
TO-204
Standard
Power MOSFET
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
Symbol
V
V
I
I
R
DM
D25
GSS
DSS
GS
GSM
JM
stg
DSS
DGR
D
J
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
Mounting torque
Test Conditions
V
V
V
V
V
V
Pulse test, t 300 s, duty cycle d 2 %
J
J
C
C
C
GS
GS
GS
GS
DS
DS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
= 10 V, I
GS
, I
D
D
DC
D
= 250 A
= 3 mA
DSS
, V
= 0.5 I
DS
= 0
D25
GS
= 1 M
T
T
6N90
6N90A
J
J
= 25 C
= 125 C
(T
J
= 25 C, unless otherwise specified)
JM
IXTH / IXTM 6N90
IXTH / IXTM 6N90A
TO-204 = 18 g, TO-247 = 6 g
min.
900
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
900
900
180
150
300
20
30
24
6
max.
100
250
4.5
1.8
1.4
1
mA
W
nA
V
V
V
V
A
A
V
V
C
C
C
C
A
TO-247 AD (IXTH)
TO-204 AA (IXTM)
G = Gate,
S = Source,
Features
l
l
l
l
l
Applications
l
l
l
l
Advantages
l
l
l
International standard packages
Low R
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
900 V
900 V
V
DSS
DS (on)
HDMOS
D = Drain,
TAB = Drain
6 A
6 A
I
D25
TM
G
process
91543E(5/96)
R
D (TAB)
1.8
1.4
DS(on)
1 - 4

IXTM6N90A Summary of contents

Page 1

... 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXTH / IXTM 6N90 IXTH / IXTM 6N90A Maximum Ratings 900 = 1 M 900 ...

Page 2

... D D25 38 0.25 Characteristic Values ( unless otherwise specified) J min. typ 100 V 900 R IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXTH 6N90 IXTH 6N90A IXTM 6N90 IXTM 6N90A TO-247 AD (IXTH) Outline max ...

Page 3

... Amperes D Fig. 5 Drain Current vs. Case Temperature -50 - Degrees C C © 2000 IXYS All rights reserved 6N90A 6N90 75 100 125 150 IXTH 6N90 IXTH 6N90A IXTM 6N90 IXTM 6N90A Fig. 2 Input Admittance ...

Page 4

... V - Volts CE Fig.11 Transient Thermal Impedance 1.000 D=0.5 D=0.2 0.100 D=0.1 D=0.05 D=0.02 D=0.01 0.010 Single Pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved 0.001 0.01 Time - Seconds IXTH 6N90 IXTH 6N90A IXTM 6N90 IXTM 6N90A Fig.8 Forward Bias Safe Operating Area 10 Limited by R DS(on ...

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