IXTP05N100P IXYS, IXTP05N100P Datasheet

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IXTP05N100P

Manufacturer Part Number
IXTP05N100P
Description
Manufacturer
IXYS
Datasheet

Specifications of IXTP05N100P

Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
0.5
Rds(on), Max, Tj=25°c, (?)
30
Ciss, Typ, (pf)
196
Qg, Typ, (nc)
8.1
Trr, Typ, (ns)
750
Pd, (w)
50
Rthjc, Max, (k/w)
2.5
Package Style
TO-220

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTP05N100P
Manufacturer:
IXYS
Quantity:
161
Polar
Power MOSFET
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
T
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Torque
TO-263
TO-220
Test Conditions
V
V
V
V
V
S
C
J
J
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 10V, I
DM
, V
GS
DSS
, I
D
, V
DD
D
D
= 250μA
= 50μA
= 0.5 • I
≤ V
GS
DS
= 0V
DSS
= 0V
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
JM
IXTA05N100P
IXTP05N100P
1000
Min.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10
1000
1000
± 20
± 30
1.25
Typ.
150
300
260
0.5
0.5
2.5
3.0
50
10
50
24
± 50
750
Max.
4.0
Nm/lb.in.
30
10
V/ns
mJ
nA
μA
μA
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
TO-263 AA (IXTA)
TO-220AB (IXTP)
G = Gate
S = Source
Features
Advantages
Applications
V
I
R
D25
International Standard Packages
Avalanche Rated
Fast Intrinsic Diode
Dynamic dv/dt Rated
Low Package Inductance
High Power Density
Easy to Mount
Space Savings
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
DS(on)
DSS
G
D S
= 1000V
= 0.5A
≤ ≤ ≤ ≤ ≤ 30Ω Ω Ω Ω Ω
G
D
Tab = Drain
S
= Drain
D (Tab)
D (Tab)
DS100272A(12/10)

Related parts for IXTP05N100P

IXTP05N100P Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on © 2010 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXTA05N100P IXTP05N100P Maximum Ratings 1000 = 1MΩ 1000 GS ± 20 ± 30 0.5 1.25 JM 0.5 50 ≤ 150° -55 ... +150 150 -55 ... +150 300 260 1.13/10 2 ...

Page 2

... I = 0.5 • I 0.7 DSS D D25 4.2 0.50 Characteristic Values Min. Typ. JM 750 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA05N100P IXTP05N100P TO-263 Outline Max 2.5 °C/W °C/W Max. 0.5 A TO-220 Outline 2 Pins Gate 3 - Source 6,404,065 B1 ...

Page 3

... Value vs. D 0.6 0 125ºC J 0.4 0 25ºC J 0.2 0.1 0 0.5 0.6 0.7 0.8 0.9 IXTA05N100P IXTP05N100P Fig. 2. Extended Output Characteristics @ Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V 0.50A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature ...

Page 4

... 0.25A 1mA NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area 10 R Limit DS(on 150º 25ºC C Single Pulse 10 100 V - Volts DS IXTA05N100P IXTP05N100P 25ºC 125ºC 0.5 0.6 0.7 0 100µs 1ms 10ms DC 1000 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Second IXTA05N100P IXTP05N100P 0.1 1 IXYS REF: IXT_05N100P (N1)7-22-10 ...

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