IXTK5N250 IXYS, IXTK5N250 Datasheet - Page 3

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IXTK5N250

Manufacturer Part Number
IXTK5N250
Description
High Voltage Power MOSFETs (>1200V)
Manufacturer
IXYS
Datasheet

Specifications of IXTK5N250

Vdss, Max, (v)
2500
Id(cont), Tc=25°c, (a)
5
Rds(on), Max, Tj=25°c, (?)
8.8
Ciss, Typ, (pf)
8560
Qg, Typ, (nc)
200
Trr, Typ, (ns)
1200
Pd, (w)
960
Rthjc, Max, (k/w)
0.13
Package Style
TO-264
© 2010 IXYS CORPORATION, All Rights Reserved
4.5
3.5
2.5
1.5
0.5
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
5
4
3
2
1
0
6
5
4
3
2
1
0
-50
-50
0
V
GS
Fig. 3. R
= 10V
-25
-25
5
Fig. 1. Output Characteristics @ T
Fig. 5. Maximum Drain Current vs.
0
0
DS(on)
10
Junction Temperature
T
Normalized to I
Case Temperature
T
C
25
25
J
- Degrees Centigrade
- Degrees Centigrade
15
V
DS
I
D
- Volts
50
50
= 5A
20
75
75
D
I
D
= 2.5A Value vs.
= 2.5A
V
GS
25
100
100
J
= 10V
= 25ºC
5V
4V
3V
30
125
125
150
150
35
4.5
3.5
2.5
1.5
0.5
2.5
1.5
0.5
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
5
4
3
2
1
0
2
1
0
2.0
0
0
V
GS
0.5
Fig. 4. R
= 10V
Fig. 2. Output Characteristics @ T
5
2.5
1
DS(on)
10
1.5
Fig. 6. Input Admittance
3.0
Normalized to I
V
V
Drain Current
2
GS
DS
15
I
D
- Amperes
- Volts
- Volts
T
T
3.5
2.5
J
J
T
= 125ºC
= 25ºC
J
= 125ºC
20
3
D
= 2.5A Value vs.
4.0
3.5
IXTK5N250
IXTX5N250
25
V
25ºC
GS
J
= 125ºC
= 10V
4
3V
4V
4.5
30
- 40ºC
4.5
5.0
35
5

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