IXFM67N10 IXYS, IXFM67N10 Datasheet - Page 4

• Manufacturer Part Number: IXFM67N10
• Description: Standard HiperFETs (50V to 1200V)
• Manufacturer: IXYS

Specifications of IXFM67N10

• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 67
• Rds(on), Max, Tj=25°c, (?): 0.025
• Ciss, Typ, (pf): 4500
• Qg, Typ, (nc): 180
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 298
• Rthjc, Max, (ºc/w): 0.42
• Package Style: TO-204

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0.001
6000
5000
4000
3000
2000
1000
0.01
0.1
0.00001
10
9
8
7
6
5
4
3
2
1
0
0
0
0
Fig.7 Gate Charge Characteristic Curve
Fig.9 Capacitance Curves
Fig.11 Transient Thermal Impedance
D=0.01
D=0.02
D=0.05
D=0.5
D=0.2
D=0.1
Single pulse
V
I
I
D
G
DS
= 37.5A
= 1mA
25
= 50V
5
Gate Charge - nCoulombs
50
75
0.0001
10
V
f = 1MHz
V
DS
DS
100 125 150 175 200
- Volts
= 25V
15
C
C
C
iss
oss
rss
20
0.001
25
Time - Seconds
0.01
100
150
125
100
10
75
50
25
1
0
0.00
1
Fig.8 Forward Bias Safe Operating Area
Fig.10 Source Current vs. Source
Limited by R
IXFH 67N10
IXFM 67N10
0.1
0.25
to Drain Voltage
DS(on)
T
0.50
J
= 125°C
V
V
DS
SD
10
0.75
- Volts
- Volt
1
1.00
T
J
= 25°C
IXFH 75N10
IXFM 75N10
1.25
100
1.50
10
1ms
100ms
10µs
100µs
10ms
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