IXFH70N20Q3 IXYS, IXFH70N20Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFH70N20Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFH70N20Q3

• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 70
• Rds(on), Max, Tj=25°c, (?): 0.04
• Ciss, Typ, (pf): 3150
• Qg, Typ, (nc): 67
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 690
• Rthjc, Max, (ºc/w): 0.18
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10000
1000
210
180
150
120
100
100
10
90
60
30
90
80
70
60
50
40
30
20
10
0
0
0.3
0
4
f
= 1 MHz
4.5
0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.5
5
10
5.5
0.6
Fig. 7. Input Admittance
Fig. 11. Capacitance
6
T
0.7
J
15
= 125ºC
6.5
V
V
V
0.8
DS
SD
GS
20
- Volts
- Volts
- Volts
7
0.9
T
J
7.5
= 125ºC
- 40ºC
25
1.0
25ºC
T
J
8
= 25ºC
1.1
8.5
30
C iss
C oss
C rss
1.2
9
35
1.3
9.5
1.4
40
10
1000
100
16
14
12
10
10
50
40
30
20
10
8
6
4
2
0
1
0
10
0
0
R
T
T
Single Pulse
DS(on)
V
I
I
J
C
10
D
G
DS
10
= 150ºC
= 25ºC
= 35A
= 10mA
= 100V
Fig. 12. Forward-Bias Safe Operating Area
Limit
20
20
30
Fig. 8. Transconductance
30
Fig. 10. Gate Charge
40
Q
40
G
- NanoCoulombs
I
D
V
50
DS
- Amperes
100
50
- Volts
60
60
IXFH70N20Q3
IXFT70N20Q3
70
25µs
100µs
1ms
70
T
J
80
= - 40ºC
25ºC
125ºC
80
90
90
100
1,000
100
110