IXFQ24N50P2 IXYS, IXFQ24N50P2 Datasheet

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IXFQ24N50P2

Manufacturer Part Number
IXFQ24N50P2
Description
Polar2 HiperFETS
Manufacturer
IXYS
Datasheet

Specifications of IXFQ24N50P2

Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
24
Rds(on), Max, Tj=25°c, (?)
0.27
Ciss, Typ, (pf)
2890
Qg, Typ, (nc)
48
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
480
Rthjc, Max, (ºc/w)
0.26
Package Style
TO-3P
Polar2
Power MOSFET
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
T
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Torque
Test Conditions
V
V
V
V
V
S
C
J
J
C
C
C
C
GS
DS
GS
DS
GS
HiperFET
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ± 30V, V
= V
= 10V, I
DM
, V
GS
DSS
, I
D
, V
DD
D
D
= 250μA
= 1mA
= 0.5 • I
≤ V
GS
DS
= 0V
DSS
= 0V
TM
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXFQ24N50P2
Min.
Characteristic Values
500
2.5
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10
± 30
± 40
Typ.
500
500
750
480
150
300
260
5.5
24
50
12
15
± 100 nA
Max.
Nm/lb.in.
270 mΩ
4.5
25 μA
1 mA
V/ns
mJ
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
G = Gate
S = Source
Features
Advantages
Applications
V
I
R
TO-3P
D25
Fast Intrinsic Diode
Dynamic dv/dt Rating
Avalanche Rated
Low R
Low Package Inductance
High Power Density
Easy to Mount
Space Savings
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Battery Chargers
Uninterrupted Power Supplies
AC and DC Motor Drives
High Speed Power Switching
Application
DS(on)
DSS
G
D
DS(ON)
S
= 500V
= 24A
≤ ≤ ≤ ≤ ≤ 270mΩ Ω Ω Ω Ω
and Q
Tab = Drain
D
G
= Drain
Tab
DS100271A(9/11)

Related parts for IXFQ24N50P2

IXFQ24N50P2 Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on © 2011 IXYS CORPORATION, All Rights Reserved IXFQ24N50P2 Maximum Ratings 500 = 1MΩ 500 GS ± 30 ± 750 ≤ 150° 480 -55 ... +150 150 -55 ... +150 300 260 1.13/10 5.5 Characteristic Values Min ...

Page 2

... I = 0.5 • DSS D D25 16 0.25 Characteristic Values Min. Typ 0.69 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFQ24N50P2 TO-3P (IXFQ) Outline Max 0.26 °C/W °C/W Max 1.3 V 200 ns A μC 6,404,065 B1 6,683,344 ...

Page 3

... Value vs 125º 25º IXFQ24N50P2 Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V GS I -50 - Degrees Centigrade J Fig ...

Page 4

... Volts DS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. = 125ºC 25ºC - 40ºC 5.5 6.0 6.5 7 25ºC J 0.8 0.9 1.0 1.1 C iss C oss C rss 0. IXFQ24N50P2 Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 250V 12A ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Second IXFQ24N50P2 0.1 1 IXYS REF: F_24N50P2(57-N45)6-03-10-A ...

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