IXFX64N50Q3 IXYS, IXFX64N50Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFX64N50Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFX64N50Q3

• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 64
• Rds(on), Max, Tj=25°c, (?): 0.085
• Ciss, Typ, (pf): 6950
• Qg, Typ, (nc): 145
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 1000
• Rthjc, Max, (ºc/w): 0.125
• Package Style: PLUS247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
100
200
180
160
140
120
100
100
90
80
70
60
50
40
30
20
10
80
60
40
20
10
0
0
0.3
4
0
f
= 1 MHz
4.5
0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
5
0.5
10
5.5
0.6
Fig. 7. Input Admittance
Fig. 11. Capacitance
6
15
0.7
T
T
J
J
V
V
V
= 125ºC
= 125ºC
6.5
SD
DS
GS
0.8
- Volts
20
- Volts
- Volts
7
25ºC
0.9
25
7.5
T
J
C iss
C oss
1.0
C rss
= 25ºC
- 40ºC
8
30
1.1
8.5
35
1.2
9
1.3
9.5
40
1000
100
16
14
12
10
80
70
60
50
40
30
20
10
10
8
6
4
2
0
0
1
10
0
0
V
I
I
T
T
Single Pulse
D
G
DS
J
C
10
= 32A
= 10mA
= 150ºC
= 25ºC
= 250V
R
Fig. 12. Forward-Bias Safe Operating Area
DS(on)
20
Limit
50
Fig. 8. Transconductance
30
Fig. 10. Gate Charge
Q
G
40
- NanoCoulombs
I
D
V
- Amperes
DS
100
100
50
- Volts
60
IXFK64N50Q3
IXFX64N50Q3
70
T
150
J
= - 40ºC
125ºC
80
25ºC
25µs
100µs
1ms
90
1,000
100
200