IXFK80N50Q3 IXYS, IXFK80N50Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFK80N50Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFK80N50Q3

• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 80
• Rds(on), Max, Tj=25°c, (?): 0.065
• Ciss, Typ, (pf): 10000
• Qg, Typ, (nc): 200
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 1250
• Rthjc, Max, (ºc/w): 0.10
• Package Style: TO-264

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
100
240
200
160
120
120
100
10
80
60
40
20
80
40
0
0
0.3
4.5
0
f
= 1 MHz
0.4
5.0
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.5
5.5
10
0.6
6.0
Fig. 7. Input Admittance
T
J
Fig. 11. Capacitance
= 125ºC
6.5
0.7
15
V
V
V
7.0
0.8
DS
SD
GS
T
J
20
- Volts
- Volts
- Volts
= 125ºC
- 40ºC
0.9
7.5
25ºC
T
J
25
8.0
1.0
= 25ºC
C oss
C rss
C iss
8.5
1.1
30
9.0
1.2
35
1.3
9.5
10.0
1.4
40
1000
100
100
0.1
80
60
40
20
10
16
14
12
10
0
1
8
6
4
2
0
10
0
0
V
I
I
T
T
Single Pulse
D
G
J
C
DS
= 150ºC
= 40A
= 10mA
= 25ºC
R
= 250V
Fig. 12. Forward-Bias Safe Operating Area
40
DS(on)
20
Limit
80
Fig. 8. Transconductance
40
Fig. 10. Gate Charge
Q
G
120
- NanoCoulombs
I
D
V
- Amperes
DS
100
60
- Volts
160
T
J
IXFK80N50Q3
IXFX80N50Q3
= - 40ºC
80
25ºC
125ºC
200
100
240
100µs
1ms
1,000
280
120