IXFN100N50Q3 IXYS, IXFN100N50Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFN100N50Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFN100N50Q3

• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 82
• Rds(on), Max, Tj=25°c, (?): 0.049
• Ciss, Typ, (pf): 13800
• Qg, Typ, (nc): 255
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 960
• Rthjc, Max, (ºc/w): 0.13
• Package Style: SOT-227

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100000
10000
1000
300
250
200
150
100
100
140
120
100
80
60
40
20
50
0
0
4.5
0.3
0
0.4
f
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5.0
= 1 MHz
5
0.5
5.5
0.6
10
T
0.7
Fig. 7. Input Admittance
J
6.0
= 125ºC
Fig. 11. Capacitance
15
0.8
V
6.5
V
V
0.9
SD
DS
GS
T
J
20
- Volts
- Volts
= 125ºC
- Volts
1.0
7.0
T
J
= 25ºC
1.1
25
7.5
C oss
C iss
25ºC
C rss
1.2
30
1.3
8.0
1.4
- 40ºC
35
8.5
1.5
9.0
1.6
40
1000
110
100
100
0.1
90
80
70
60
50
40
30
20
10
16
14
12
10
10
8
6
4
2
0
0
1
10
0
0
V
I
I
T
T
Single Pulse
R
D
G
DS
J
C
DS(on)
= 50A
= 10mA
= 150ºC
= 25ºC
Fig. 12. Forward-Bias Safe Operating Area
= 250V
50
20
Limit
100
40
Fig. 8. Transconductance
Fig. 10. Gate Charge
Q
150
G
- NanoCoulombs
60
I
D
V
IXFN100N50Q3
- Amperes
DS
100
- Volts
200
80
T
J
= - 40ºC
250
100
25ºC
125ºC
300
120
250µs
1ms
350
1,000
140