IXFA7N60P3 IXYS, IXFA7N60P3 Datasheet - Page 4
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IXFA7N60P3
Manufacturer Part Number
IXFA7N60P3
Description
Polar3 HiperFETS
Manufacturer
IXYS
Datasheet
1.IXFP7N60P3.pdf
(5 pages)
Specifications of IXFA7N60P3
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
7
Rds(on), Max, Tj=25°c, (?)
1.15
Ciss, Typ, (pf)
705
Qg, Typ, (nc)
13.3
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
180
Rthjc, Max, (ºc/w)
0.69
Package Style
TO-263
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
20
18
16
14
12
10
10
9
8
7
6
5
4
3
2
1
0
8
6
4
2
0
1
3.0
0.3
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
3.5
0.4
5
4.0
10
0.5
Fig. 7. Input Admittance
Fig. 11. Capacitance
4.5
15
0.6
V
T
V
V
J
SD
DS
GS
= 125ºC
T
J
5.0
- Volts
20
- Volts
- Volts
= 125ºC
0.7
5.5
25
25ºC
0.8
6.0
30
C iss
C oss
C rss
T
- 40ºC
J
= 25ºC
0.9
6.5
35
7.0
1.0
40
100
0.1
10
10
14
12
10
1
9
8
7
6
5
4
3
2
1
0
8
6
4
2
0
10
0
0
T
T
Single Pulse
V
I
I
D
G
J
C
R
DS
= 150ºC
DS(on)
= 3.5A
= 10mA
= 25ºC
1
= 300V
2
Fig. 12. Forward-Bias Safe Operating Area
Limit
2
4
Fig. 8. Transconductance
3
Fig. 10. Gate Charge
Q
G
4
- NanoCoulombs
I
6
D
V
DS
- Amperes
100
- Volts
5
8
6
T
J
= - 40ºC
IXFA7N60P3
IXFP7N60P3
7
10
25ºC
125ºC
8
12
9
25µs
100µs
1ms
1,000
10
14