IXFK44N80Q3 IXYS, IXFK44N80Q3 Datasheet - Page 4
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IXFK44N80Q3
Manufacturer Part Number
IXFK44N80Q3
Description
Q3-Class HiPerFETs
Manufacturer
IXYS
Datasheet
1.IXFX44N80Q3.pdf
(5 pages)
Specifications of IXFK44N80Q3
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
44
Rds(on), Max, Tj=25°c, (?)
0.19
Ciss, Typ, (pf)
9840
Qg, Typ, (nc)
185
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
1250
Rthjc, Max, (ºc/w)
0.10
Package Style
TO-264
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
120
100
100
80
60
40
20
60
50
40
30
20
10
10
0
0
0.3
5
0
f
= 1 MHz
0.4
5.5
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.5
6
10
0.6
Fig. 7. Input Admittance
6.5
Fig. 11. Capacitance
T
J
15
= 125ºC
T
0.7
J
= 125ºC
V
V
V
7
SD
DS
GS
0.8
- Volts
20
- Volts
- Volts
7.5
0.9
25ºC
25
T
J
C iss
C oss
C rss
8
= 25ºC
1.0
30
8.5
1.1
- 40ºC
35
1.2
9
1.3
9.5
40
1000
100
0.1
10
80
70
60
50
40
30
20
10
16
14
12
10
0
1
8
6
4
2
0
10
0
0
T
T
Single Pulse
V
I
I
J
C
D
G
DS
= 150ºC
= 25ºC
= 22A
= 10mA
= 400V
10
Fig. 12. Forward-Bias Safe Operating Area
50
R
DS(on)
20
Limit
Fig. 8. Transconductance
Fig. 10. Gate Charge
100
Q
G
- NanoCoulombs
30
I
D
V
DS
- Amperes
100
- Volts
150
40
IXFK44N80Q3
IXFX44N80Q3
T
50
J
200
= - 40ºC
125ºC
25ºC
60
250
25µs
100µs
1ms
1,000
70