IXFB62N80Q3 IXYS, IXFB62N80Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFB62N80Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFB62N80Q3

• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 62
• Rds(on), Max, Tj=25°c, (?): 0.14
• Ciss, Typ, (pf): 13600
• Qg, Typ, (nc): 270
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 1560
• Rthjc, Max, (ºc/w): 0.08
• Package Style: PLUS264

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
100
100
200
180
160
140
120
100
90
80
70
60
50
40
30
20
10
10
80
60
40
20
0
0
4.0
0.2
0
f
= 1 MHz
4.5
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.4
5.0
10
5.5
0.6
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
J
15
= 125ºC
6.0
V
V
V
0.8
DS
SD
GS
T
6.5
20
- Volts
- Volts
J
- Volts
= 125ºC
7.0
1.0
T
25
J
= 25ºC
C iss
C oss
C rss
7.5
25ºC
30
1.2
8.0
35
- 40ºC
8.5
1.4
9.0
40
1000
100
100
16
14
12
10
10
90
80
70
60
50
40
30
20
10
8
6
4
2
0
0
1
10
0
0
V
I
I
T
T
Single Pulse
D
G
DS
J
C
10
= 31A
= 10mA
= 150ºC
= 25ºC
50
= 400V
Fig. 12. Forward-Bias Safe Operating Area
20
R
DS(on)
100
Fig. 8. Transconductance
Limit
30
Fig. 10. Gate Charge
150
Q
40
G
- NanoCoulombs
I
D
V
- Amperes
DS
IXFB62N80Q3
200
100
50
- Volts
60
250
70
T
J
300
= - 40ºC
125ºC
25ºC
80
350
90
25µs
100µs
1,000
1ms
100
400