IXFA5N100P IXYS, IXFA5N100P Datasheet

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IXFA5N100P

Manufacturer Part Number
IXFA5N100P
Description
Manufacturer
IXYS
Datasheet

Specifications of IXFA5N100P

Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
5
Rds(on), Max, Tj=25°c, (?)
2.80
Ciss, Typ, (pf)
1830
Qg, Typ, (nc)
33.4
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
250
Rthjc, Max, (ºc/w)
0.50
Package Style
TO-263
Polar
HiPerFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062) from case for 10s
Plastic body for 10s
Mounting torque
TO-263
TO-220
TO-247
V
V
V
V
V
V
Test Conditions
Power MOSFET
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 0V
= 10V, I
TM
DM
GS
, V
DSS
, I
DD
D
D
D
= 250μA
≤ V
= 250μA
= 0.5 • I
DS
DSS
= 0V
, T
(TO-220,TO-247)
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
JM
IXFA5N100P
IXFH5N100P
IXFP5N100P
-55 ... +150
-55 ... +150
Maximum Ratings
Characteristic Values
1.13 / 10
1000
Min.
3.0
1000
1000
±30
±40
300
250
150
300
260
2.5
3.0
6.0
10
10
5
5
Typ.
±100 nA
Nm/lb.in.
750 μA
Max.
6.0
2.8
10 μA
V/ns
mJ
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
g
V
V
g
g
V
I
R
TO-263 (IXFA)
TO-247 (IXFH)
TO-220 (IXFP)
G = Gate
S = Source
Features
Advantages
Applications:
D25
International standard packages
Dynamic dv/dt Rating
Avalanche Rated
Low R
Low Q
Low Drain-to-Tab capacitance
Low package inductance
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
Uninterrupted power supplies
AC motor control
High speed power switching
applications
Easy to mount
Space savings
DS(on)
DSS
G
G
DS(ON)
G
D
G
D S
= 1000V
= 5A
≤ ≤ ≤ ≤ ≤ 2.8Ω Ω Ω Ω Ω
S
S
, rugged Polar
D
TAB = Drain
= Drain
(TAB)
DS99923(07/08)
(TAB)
(TAB)
TM
process

Related parts for IXFA5N100P

IXFA5N100P Summary of contents

Page 1

... DSS DS DSS 10V 0.5 • I DS(on D25 © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXFA5N100P IXFH5N100P IXFP5N100P Maximum Ratings 1000 = 1MΩ 1000 GS ±30 ± 300 ≤ 150° 250 -55 ... +150 150 -55 ... +150 ...

Page 2

... I 10.6 DSS D D25 14.4 0.50 0.25 Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. JM 7.4 0.43 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123B1 5,034,796 5,187,117 5,486,715 6,306,728B1 IXFA5N100P IXFH5N100P TO-247 (IXFH) Outline Max S Ω Dim. Millimeter nC Min. Max. A 4.7 5 2.2 2. 2.2 2 ...

Page 3

... V = 10V 2.5A Value 125º 25º IXFA5N100P IXFH5N100P Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 2 ...

Page 4

... MHz 1,000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 25ºC - 40ºC 6.0 6.5 7.0 7 25ºC J 0.9 1.0 1.1 1.2 1.00 C iss 0.10 C oss C rss 0. IXFA5N100P IXFH5N100P Fig. 8. Transconductance 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2 Amperes D Fig. 10. Gate Charge 500V 2. 10mA ...

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