IXFR24N100Q3 IXYS, IXFR24N100Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFR24N100Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFR24N100Q3

• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 18
• Rds(on), Max, Tj=25°c, (?): 0.49
• Ciss, Typ, (pf): 7200
• Qg, Typ, (nc): 140
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: ISOPLUS247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
100
50
45
40
35
30
25
20
15
10
80
70
60
50
40
30
20
10
10
5
0
0
0.3
4
0
f
= 1 MHz
4.5
0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.5
5
10
0.6
5.5
Fig. 7. Input Admittance
Fig. 11. Capacitance
15
0.7
6
T
T
J
V
V
V
J
= 125ºC
DS
SD
GS
= 125ºC
6.5
0.8
20
- Volts
- Volts
- Volts
0.9
7
25
25ºC
C oss
C rss
C iss
7.5
T
1.0
J
= 25ºC
30
1.1
8
- 40ºC
35
8.5
1.2
1.3
40
9
100
0.1
10
1
16
14
12
10
60
50
40
30
20
10
10
8
6
4
2
0
0
0
0
R
T
T
Single Pulse
J
C
DS(on)
V
I
I
= 150ºC
D
G
= 25ºC
DS
5
= 12A
= 10mA
Fig. 12. Forward-Bias Safe Operating Area
= 500V
Limit
10
50
Fig. 8. Transconductance
15
Fig. 10. Gate Charge
Q
V
G
20
DS
- NanoCoulombs
I
100
D
IXFR24N100Q3
- Volts
- Amperes
100
25
30
T
J
35
= - 40ºC
150
25ºC
125ºC
40
45
1,000
1ms
25µs
100µs
200
50