IXFL36N110P IXYS, IXFL36N110P Datasheet
IXFL36N110P
Manufacturer Part Number
IXFL36N110P
Description
Manufacturer
IXYS
Datasheet
1.IXFL36N110P.pdf
(2 pages)
Specifications of IXFL36N110P
Vdss, Max, (v)
1100
Id(cont), Tc=25°c, (a)
26
Rds(on), Max, Tj=25°c, (?)
0.260
Ciss, Typ, (pf)
23000
Qg, Typ, (nc)
350
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
520
Rthjc, Max, (ºc/w)
0.240
Package Style
ISOPLUS264
Polar
HiPerFET
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
V
F
Weight
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
J
DSS
= 25°C, unless otherwise specified)
TM
Power MOSFET
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
Maximum lead temperature for soldering
Plastic body for 10s
50/60 Hz, RMS, 1 minute
I
Mounting force
Test Conditions
V
V
V
V
V
V
ISOL
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
≤ 1mA
= 0V, I
= V
= ± 30V, V
= V
= 0V
= 10V, I
DM
, V
GS
DSS
, I
DD
D
D
D
= 3mA
= 1mA
= 18A, Note 1
≤ V
DS
DSS
= 0V
, T
t = 1s
J
GS
≤ 150°C
= 1MΩ
Advance Technical Information
T
J
= 125°C
JM
IXFL36N110P
40..120/4.5..27
1100
-55 ... +150
-55 ... +150
Min.
3.5
Characteristic Values
Maximum Ratings
1100
1100
2500
3000
± 30
± 40
110
520
150
300
260
Typ.
26
18
20
2
8
± 300
Max.
260 mΩ
6.5
50
4 mA
N/lb.
V/ns
V~
V~
nA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
J
g
V
I
R
t
ISOPLUS i5-Pak
G = Gate
S = Source
Features
Advantages
Applications:
D25
rr
UL recognized package
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
High Voltage Switched-mode and
High Voltage Pulse Power Applications
High Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
High Voltage DC-DC converters
High Voltage DC-AC inverters
resonant-mode power supplies
Generators
Fast intrinsic diode
Easy to mount
Space savings
High power density
DS(on)
DSS
G
= 1100V
= 26A
≤ ≤ ≤ ≤ ≤ 260mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 300ns
S
D = Drain
TM
D
(HV)
DS99907A (04/08)
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IXFL36N110P Summary of contents
Page 1
... GSS DSS DS DSS 10V 18A, Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved Advance Technical Information IXFL36N110P Maximum Ratings 1100 = 1MΩ 1100 GS ± 30 ± 110 ≤ 150° 520 -55 ... +150 150 -55 ... +150 300 ...
Page 2
... Characteristic Values Min. Typ. JM 2.3 16 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFL36N110P ISOPLUS i5-Pak TM Max Ω Note: Bottom Tab meets 2500 Vrms isolation to the other pins 0.24 °C/W °C/W Max. ...