CPC5602 IXYS, CPC5602 Datasheet - Page 3

• Manufacturer Part Number: CPC5602
• Description: Depletion Mode MOSFETs
• Manufacturer: IXYS

Specifications of CPC5602

• Vds, Max, (v): 350
• Id(on), Min, (a): 0.13
• Rds(on), Max, (?): 14
• Vgs(off), Max, (v): -2
• Ciss, Typ, (pf): 300(max)
• Crss, Typ, (pf): -
• Qg, Typ, (nc): -
• Pd, (w): -
• Rthjc, Max, (ºc/w): 14
• Package Style: SOT-223

*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifi cations, please
contact our application department.
R06
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
250
200
150
100
300
250
200
150
100
50
50
0
0
-3.0
0
Capacitance vs. Drain-Source Voltage
0
V
V
GS
GS
V
V
=-0.5
GS
=-1.5
GS
=-1
=-2
5
Transfer Characteristics
Output Characteristics
1
-2.5
T
T
T
A
10
A
=125ºC
A
=-40ºC
=25ºC
(T
(V
(V
2
C
C
C
A
ISS
OSS
RSS
V
DS
V
V
GS
=25ºC)
DS
-2.0
GS
DS
=10V)
15
=-5V)
(V)
(V)
(V)
3
20
-1.5
4
25
-1.0
30
5
-2.3
-2.4
-2.5
-2.6
-2.7
-2.8
-2.9
-3.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
20
15
10
PERFORMANCE DATA*
5
0
0
-40
0.0
0
On-Resistance vs. Drain Current
20
-20
0.1
vs. Ambient Temperature
www.clare.com
V
40
GS(off)
Power Dissipation
(V
0
0.2
Temperature (ºC)
Temperature (ºC)
DS
60
vs. Temperature
=10V, I
(V
20
GS
I
D
80
0.3
(A)
=0V)
D
40
=2μA)
100 120
0.4
60
0.5
80
140 160
100
0.6
0.001
300
250
200
150
100
0.01
0.1
50
12
11
10
0
9
8
7
6
5
4
1
-40
0
1
Transconductance vs Drain Current
T
T
On-Resistance vs. Temperature
T
A
A
=125ºC
Forward Safe Operating Bias
=-40ºC
A
-20
=25ºC
(V
Device R
GS
Limited by
=0V, DC Load, T
(V
0
50
GS
10
Temperature (ºC)
DS(on)
=0V, I
(V
20
DS
I
V
D
(mA)
DS
=10V)
Device Channel
D
(V)
=100mA)
Limited by
Saturation
40
100
100
C
=25ºC)
60
CPC5602
80
1000
150
100
3