CPC5603 IXYS, CPC5603 Datasheet - Page 3
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CPC5603
Manufacturer Part Number
CPC5603
Description
Depletion Mode MOSFETs
Manufacturer
IXYS
Datasheet
1.CPC5603.pdf
(5 pages)
Specifications of CPC5603
Vds, Max, (v)
415
Id(on), Min, (a)
0.13
Rds(on), Max, (?)
14
Vgs(off), Max, (v)
-2
Ciss, Typ, (pf)
300(max
Crss, Typ, (pf)
-
Qg, Typ, (nc)
-
Pd, (w)
-
Rthjc, Max, (ºc/w)
14
Package Style
SOT-223
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application
department.
R04
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
250
200
150
100
300
250
200
150
100
50
50
0
0
-3.0
0
Capacitance vs. Drain-Source Voltage
0
V
V
GS
GS
V
V
=-0.5
GS
=-1.5
GS
=-1
=-2
5
Transfer Characteristics
Output Characteristics
1
-2.5
T
T
T
A
10
A
=125ºC
A
=-40ºC
=25ºC
(T
(V
(V
2
C
C
C
A
V
DS
V
ISS
OSS
RSS
V
GS
=25ºC)
DS
-2.0
GS
DS
=10V)
15
=-5V)
(V)
(V)
(V)
3
20
-1.5
4
25
-1.0
30
5
-2.3
-2.4
-2.5
-2.6
-2.7
-2.8
-2.9
-3.0
20
15
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
5
0
0
0.0
-40
0
Performance Data*
On-Resistance vs. Drain Current
20
-20
0.1
www.clare.com
vs. Ambient Temperature
V
40
GS(off)
Power Dissipation
(V
0
0.2
Temperature (ºC)
Temperature (ºC)
DS
60
vs. Temperature
=10V, I
(V
20
GS
I
D
0.3
80
=0V)
(A)
D
40
=2μA)
100 120
0.4
60
0.5
80
140 160
0.6
100
0.001
0.01
300
250
200
150
100
0.1
50
12
11
10
0
9
8
7
6
5
4
1
-40
0
1
Transconductance vs Drain Current
T
T
On-Resistance vs. Temperature
T
A
A
=125ºC
Forward Safe Operating Bias
=-40ºC
A
-20
=25ºC
(V
Device R
Limited by
GS
(V
=0V, DC Load, T
0
50
GS
DS(on)
10
Temperature (ºC)
=0V, I
(V
20
DS
I
V
D
Device Channel
(mA)
DS
=10V)
D
Limited by
Saturation
(V)
=100mA)
40
100
100
C
60
=25ºC)
CPC5603
80
1000
150
100
3