IXTT10N100D2 IXYS, IXTT10N100D2 Datasheet - Page 4
IXTT10N100D2
Manufacturer Part Number
IXTT10N100D2
Description
D2 Depletion Mode Power MOSFETs
Manufacturer
IXYS
Datasheet
1.IXTT10N100D2.pdf
(5 pages)
Specifications of IXTT10N100D2
Vds, Max, (v)
1000
Id(on), Min, (a)
1.5
Rds(on), Max, (?)
-4.5
Vgs(off), Max, (v)
5320
Ciss, Typ, (pf)
70
Crss, Typ, (pf)
200
Qg, Typ, (nc)
695
Pd, (w)
0.18
Rthjc, Max, (ºc/w)
-
Package Style
TO268
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
2.6
2.2
1.8
1.4
1.0
0.6
0.2
1.3
1.2
1.1
1.0
0.9
0.8
16
14
12
10
8
6
4
2
0
-50
-50
-4
Fig. 7. Normalized R
V
I
V
GS
D
DS
> 5A
Fig. 11. Normalized Breakdown and Threshold
= 0V
-3.5
-25
= 30V
-25
Voltages vs. Junction Temperature
-3
0
0
Fig. 9. Input Admittance
T
T
-2.5
J
J
25
25
- Degrees Centigrade
- Degrees Centigrade
DS(on)
V
GS
V
GS(off)
- Volts
50
50
-2
vs. Junction Temperature
@ V
T
J
DS
-1.5
= 125ºC
75
75
- 40ºC
= 25V
25ºC
BV
DSX
100
100
-1
@ V
GS
= - 5V
-0.5
125
125
150
150
0
2.6
2.2
1.8
1.4
1.0
0.6
16
14
12
10
30
25
20
15
10
8
6
4
2
0
5
0
0.4
0
0
V
V
DS
GS
Fig. 12. Forward Voltage Drop of Intrinsic Diode
2
= 30V
= -10V
Fig. 8. R
4
0.5
T
J
T
4
= 125ºC
J
= 25ºC
Fig. 10. Transconductance
DS(on)
8
6
vs. Drain Current
0.6
Normalized to I
T
J
I
I
= 125ºC
D
D
V
8
SD
- Amperes
- Amperes
12
- Volts
10
0.7
T
IXTH10N100D2
IXTT10N100D2
J
= - 40ºC
D
16
12
125ºC
25ºC
= 5A Value
V
GS
14
= 0V
0.8
5V
T
20
J
- - - -
= 25ºC
16
0.9
24
18