IXTT2N170D2 IXYS, IXTT2N170D2 Datasheet - Page 3
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IXTT2N170D2
Manufacturer Part Number
IXTT2N170D2
Description
D2 Depletion Mode Power MOSFETs
Manufacturer
IXYS
Datasheet
1.IXTH2N170D2.pdf
(5 pages)
Specifications of IXTT2N170D2
Vds, Max, (v)
1700
Id(on), Min, (a)
2.0
Rds(on), Max, (?)
6.5
Vgs(off), Max, (v)
-4.0
Ciss, Typ, (pf)
3650
Crss, Typ, (pf)
80
Qg, Typ, (nc)
110
Pd, (w)
568
Rthjc, Max, (ºc/w)
0.22
Package Style
TO-268
© 2012 IXYS CORPORATION, All Rights Reserved
1.E+01
1.E+00
1.E-01
1.E-02
1.5
0.5
1.5
0.5
2
1
0
2
1
0
0
0
0
1
10
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
4
2
Fig. 5. Drain Current @ T
20
3
8
30
4
V
DS
12
V
V
40
5
DS
- Volts
DS
- Volts
- Volts
6
50
16
V
GS
7
= 5V
J
60
V
0V
= 100ºC
GS
20
J
J
= 5V
8
V
GS
1V
= 125ºC
= 25ºC
70
- 0.5V
-1.5V
= - 0.8V
- 2V
-1V
9
- 1.0V
-1.5V
- 0.5V
- 2V
- 1.2V
24
-1V
- 1.4V
0V
80
- 1.6V
- 1.8V
10
- 2.0V
90
11
28
100,000
1.E+01
1.E+00
10,000
1.E-01
1.E-02
1.E-03
1,000
5.5
4.5
3.5
2.5
1.5
0.5
100
5
4
3
2
1
0
-2.0
0
0
Fig. 2. Extended Output Characteristics @ T
10
Fig. 6. Dynamic Resistance vs. Gate Voltage
T
-1.8
J
5
= 100ºC
20
Fig. 4. Drain Current @ T
-1.6
10
T
30
J
= 25ºC
V
DS
-1.4
40
V
V
DS
15
- Volts
GS
- Volts
- Volts
50
-1.2
IXTH2N170D2
20
IXTT2N170D2
V
J
60
GS
= 25ºC
-1.0
= 5V
∆V
1V
V
GS
DS
70
25
= - 0.6V
= 70V - 30V
- 0.5V
-1.5V
J
- 0.8V
-1V
0.5V
-0.8
= 25ºC
- 1.0V
0V
- 1.2V
80
- 1.4V
- 1.6V
- 1.8V
- 2.0V
30
-0.6
90