CPC3710 IXYS, CPC3710 Datasheet - Page 3

• Manufacturer Part Number: CPC3710
• Description: Depletion Mode MOSFETs
• Manufacturer: IXYS

Specifications of CPC3710

• Vds, Max, (v): 250(min)
• Id(on), Min, (a): 0.2
• Rds(on), Max, (?): 10
• Vgs(off), Max, (v): -3.9
• Ciss, Typ, (pf): 100
• Crss, Typ, (pf): -
• Qg, Typ, (nc): -
• Pd, (w): -
• Rthjc, Max, (ºc/w): 15
• Package Style: SOT-89

*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifi cations, please
contact our application department.
R00B
0.0001
0.001
14.0
12.0
10.0
300
270
240
210
180
150
120
8.0
6.0
4.0
2.0
90
60
30
1.0
0.1
0
0
-40
0
0
Maximum Rated Safe Operating Area
1
Output Characteristics
R
-0
(V
ON
10
GS
Temperature (ºC)
2
vs. Temperature
=0V, I
(T
at 25ºC
A
V
V
=25ºC)
DS
40
DS
3
D
(V)
=100mA)
(V)
100
4
80
V
V
V
V
GS
GS
GS
GS
=0.0V
=-1.0V
=-1.5V
=-2.0V
5
1000
120
6
350
300
250
200
150
100
160
140
120
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
80
60
40
20
50
PERFORMANCE DATA*
0
0
0
-3.0
0
Capacitance vs. Drain Source Voltage
0
C
RSS
20
Transfer Characteristics
Power Dissipation vs.
Ambient Temperature
PRELIMINARY
-2.5
10
40
Temperature (ºC)
+125ºC
60
(V
(V
V
V
GS
DS
-2.0
GS
DS
20
=-5V)
=5V)
80
(V)
(V)
+25ºC
100
-1.5
30
120
C
C
-40ºC
OSS
ISS
-1.0
140
40
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
300
250
200
150
100
20
18
16
14
12
10
50
0
8
6
4
2
0
0
-40
0
0
Transconductance Vs. Drain Current
On-Resistance vs. Drain Current
10
0.06
20 30 40
V
-0
GS(off)
+125ºC
(V
DS
Temperature (ºC)
0.12
=10V, I
vs. Temperature
(V
(V
I
DS
D
GS
+25ºC
I
D
40
(mA)
50
=10V)
=0V)
(A)
D
0.18
=1mA)
-55ºC
60 70 80
80
CPC3710
0.24
90
120
100
0.3
3