CPC3714 IXYS, CPC3714 Datasheet

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CPC3714

Manufacturer Part Number
CPC3714
Description
Depletion Mode MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of CPC3714

Vds, Max, (v)
350(min)
Id(on), Min, (a)
0.2
Rds(on), Max, (?)
14
Vgs(off), Max, (v)
-3.9
Ciss, Typ, (pf)
45
Crss, Typ, (pf)
-
Qg, Typ, (nc)
-
Pd, (w)
-
Rthjc, Max, (ºc/w)
15
Package Style
SOT-89
Features
Applications
Package Pinout
DS-CPC3714-R00B
Ignition Modules
Normally-On Switches
Solid State Relays
Converters
Telecommunications
Power Supply
Offers Low R
R
High Input Impedance
High Breakdown Voltage: 350V
Low V
Small Package Size: SOT-89
Pb
BV
BV
DS(on
350V
DSX
DGX
GS(off)
P
/
14 max. at 25ºC
2002/95/EC
RoHS
Voltage: -1.6 to -3.9V
R
DS(on)
(max)
DS(on)
14
G
(SOT-89)
D
S
at Cold Temperatures
e
3
I
DSS
240mA
(min)
D
Package
SOT-89
PRELIMINARY
PRELIMINARY
Description
Ordering Information
Circuit Symbol
The CPC3714 is an N-channel, depletion-mode, field
effect transistor (FET) that utilizes Clare’s proprietary
third-generation vertical DMOS process. The
third-generation process realizes world class, high
voltage MOSFET performance in an economical
silicon gate process. Our vertical DMOS process
yields a robust device, with high input impedance,
for use in high power applications. The CPC3714
is a highly reliable FET device that has been used
extensively in Clare’s solid state relays for industrial
and telecommunications applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3714 offers a low, 14 maximum, on-state
resistance at 25ºC.
The CPC3714 has a minimum breakdown voltage of
350V
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Part #
CPC3714CTR
P
and is available in an SOT-89 package. As with
N-Channel Depletion-Mode FET
Description
SOT-89 (1000/Reel)
G
D
S
CPC3714
1

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CPC3714 Summary of contents

Page 1

... The CPC3714 offers a low, 14 maximum, on-state resistance at 25ºC. The CPC3714 has a minimum breakdown voltage of 350V and is available in an SOT-89 package. As with P all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown ...

Page 2

... D =240mA - - D = 10V 225 - 150mA - 0.6 SD  =25ºC ºC 240mA V DD PULSE GENERATOR R gen INPUT CPC3714 Max Units - V P -3.9 V 4.5 mV/ºC 100 nA   14 1.1 %/ºC  100 1 DRM 600mA R L OUTPUT D ...

Page 3

... Temperature (ºC) Capacitance vs. Drain Source Voltage (V =-5V) GS 160 140 120 100 RSS 0 1000 (V) DS PRELIMINARY CPC3714 V vs. Temperature GS(OFF) (V =10V, I =1mA -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -1.0 - 100 Temperature (ºC) Transconductance vs. Drain Current (V =10V) DS 300 -55ºC 250 +25ºC 200 +125º ...

Page 4

... Chlorine-based or Fluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be used RoHS 3 2002/95/EC 4 Moisture Sensitivity Level (MSL) Rating MSL 1 Maximum Temperature x Time 260ºC for 30 seconds PRELIMINARY CPC3714 R00B ...

Page 5

... CPC3714C 1.626 / 1.829 (0.064 / 0.072) 0.889 / 1.194 (0.035 / 0.047) 0.432 / 0.559 (0.017 / 0.022) 4.394 / 4.597 (0.173 / 0.181) CPC3714C Tape & Reel 177.8 Dia (7.00 Dia) Top Cover Tape Thickness 0.102 Max (0.004 Max) Embossed Carrier Embossment For additional information please visit our website at: www.clare.com Clare, Inc. makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in Clare’ ...

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