CPC3701 IXYS, CPC3701 Datasheet

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CPC3701

Manufacturer Part Number
CPC3701
Description
Depletion Mode MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of CPC3701

Vds, Max, (v)
60(min)
Id(on), Min, (a)
0.3
Rds(on), Max, (?)
10
Vgs(off), Max, (v)
-3.9
Ciss, Typ, (pf)
-
Crss, Typ, (pf)
-
Qg, Typ, (nc)
-
Pd, (w)
-
Rthjc, Max, (ºc/w)
-
Package Style
SOT-89
DS-CPC3701-R01
Features
Applications
Package Pinout (SOT-89)
Ignition Modules
Normally-On Switches
Solid State Relays
Converters
Security
Power Supplies
V
Depletion Mode Device Offers Low R
at Cold Temperatures
Low On-Resistance: 1 max. at 25ºC
High Input Impedance
Low V
Small Package Size SOT-89
Pb
V
(BR)DSX
(BR)DGX
60V
GS(off)
/
2002/95/EC
RoHS
Voltage: -0.8 to -2.9V
G
R
(max)
DS(ON)
D
1
S
e
3
I
DSS
600mA
(min)
D
DS(on)
Package
SOT-89
www.clare.com
Circuit Symbol
Description
The CPC3701 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes Clare’s proprietary
third-generation vertical DMOS process. The
third-generation process realizes world class, high
voltage MOSFET performance in an economical
silicon gate process. Our vertical DMOS process
yields a robust device, with high input impedance,
for use in high-power applications. The CPC3701
is a highly reliable FET device that has been used
extensively in Clare’s Solid State Relays for industrial
and security applications.
The CPC3701 has a minimum breakdown voltage of
60V, and is available in the SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3701CTR
60V, Depletion-Mode, N-Channel
Description
SOT-89 Tape & Reel (1000/Reel)
G
D
Vertical DMOS FET
S
CPC3701
1

Related parts for CPC3701

CPC3701 Summary of contents

Page 1

... RoHS 2002/95/EC DS-CPC3701-R01 60V, Depletion-Mode, N-Channel Description Package The CPC3701 is an N-channel, depletion mode, field effect transistor (FET) that utilizes Clare’s proprietary SOT-89 third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process ...

Page 2

... 300mA -10V d(off 50 f gen -5V JA 90% t off t d(off 90% 10% www.clare.com CPC3701 Min Typ Max =100µ =1A -0.8 - -2.9 D =1 4 100 DS =60V - - 1 DS =125º =15V ...

Page 3

... Chlorine-based or Fluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be used RoHS 3 2002/95/EC R01 Moisture Sensitivity Level (MSL) Rating MSL 1 Maximum Temperature x Time 260ºC for 30 seconds www.clare.com CPC3701 3 ...

Page 4

... CPC3701C 1.626 / 1.829 (0.064 / 0.072) 0.889 / 1.194 (0.035 / 0.047) 0.432 / 0.559 (0.017 / 0.022) 4.394 / 4.597 (0.173 / 0.181) (0.056 / 0.062) CPC3701C Tape & Reel 177.8 Dia (7.00 Dia) Top Cover Tape Thickness 0.102 Max (0.004 Max) Embossed Carrier Embossment For additional information please visit our website at: www.clare.com Clare, Inc. makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in Clare’ ...

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