IXTC110N055T IXYS, IXTC110N055T Datasheet

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IXTC110N055T

Manufacturer Part Number
IXTC110N055T
Description
Trench MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of IXTC110N055T

Vdss, Max, (v)
55
Id(cont), Tc=25°c, (a)
78
Rds(on), Max, Tj=25°c, (?)
0.0090
Ciss, Typ, (pf)
3080
Qg, Typ, (nc)
67
Trr, Typ, (ns)
70
Trr, Max, (ns)
-
Pd, (w)
100
Rthjc, Max, (k/w)
1.50
Package Style
ISOPLUS220™
TrenchMV
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
R
© 2007 IXYS CORPORATION All rights reserved
LRMS
DM
D25
AR
GSS
DSS
L
J
JM
stg
SOLD
C
DSS
DGR
GSM
AS
D
ISOL
GS(th)
DS(on)
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
Package Current Limit, RMS
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
50/60 Hz, t = 1 minute, I
Mounting force
Test Conditions
V
V
V
V
V
S
V
C
C
C
C
J
C
GS
J
J
GS
DS
GS
DS
GS
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
≤ 175°C, R
= 25°C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
TM
DSS
, I
D
D
D
= 250 μA
= 250 μA
= 25 A, Note 1
G
DS
= 5 Ω
= 0 V
GS
Preliminary Technical Information
ISOL
= 1 MΩ
DD
< 1 mA, RMS
T
≤ V
J
= 150°C
DSS
IXTC110N055T
JM
Min.
2.0
55
11..65/2.5..15
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
Typ.
4.3
2500
± 20
600
500
100
175
300
260
55
55
78
75
25
3
2
± 200 nA
Max.
250 μA
4.0
9.0 m Ω
5 μA
N/lb.
V/ns
mJ
°C
°C
°C
°C
°C
W
V
V
V
A
V
V
V
A
A
A
g
Features
Advantages
Applications
ISOPLUS220 (IXTC)
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
G = Gate
S = Source
Easy to mount
Space savings
High power density
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
Primary- Side Switch
V
I
R
DC/DC Converters and Off-line UPS
High Current Switching
D25
Applications
DS(on)
DSS
G
E153432
D
S
=
=
≤ ≤ ≤ ≤ ≤
Isolated back surface
D = Drain
9.0 mΩ Ω Ω Ω Ω
55
78
DS99673(02/07)
A
V

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IXTC110N055T Summary of contents

Page 1

... GSS DSS DS DSS Note 1 DS(on © 2007 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTC110N055T Maximum Ratings MΩ ± 600 JM 25 500 ≤ DSS 100 -55 ... +175 175 -55 ... +175 300 260 < ...

Page 2

... J Min. Typ. Max 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTC110N055T ISOPLUS220 (IXTC) Outline 1.Gate 2. Drain ns 3.Sourc e Note: Bottom heatsink (Pin electrically isolated from Pins 1,2, and 1.5° ...

Page 3

... Value 175º 25º 200 240 280 320 -50 IXTC110N055T Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized 55A Value DS(on) D vs. Junction Temperature ...

Page 4

... 1.4 1.6 1.8 10.00 1.00 0.10 0. 0.00001 IXTC110N055T Fig. 8. Transconductance 40ºC J 25ºC 150º 100 120 140 I - Amperes D Fig. 10. Gate Charge = 27. 25A D = 10mA NanoCoulombs G Fig. 12. Maxim um Transient Therm al Im pedance ...

Page 5

... GS 100 50 45.0 60 42.5 50 40 IXTC110N055T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current T = 25º 5Ω 10V 27. 125º Amperes D Fig. 16. Resistive Turn-off d(off 5Ω, V ...

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