IXTA200N055T2-7 IXYS, IXTA200N055T2-7 Datasheet - Page 4

• Manufacturer Part Number: IXTA200N055T2-7
• Description: TrenchT2 MOSFETs
• Manufacturer: IXYS

Specifications of IXTA200N055T2-7

• Vdss, Max, (v): 55
• Id(cont), Tc=25°c, (a): 200
• Rds(on), Max, Tj=25°c, (?): 0.0042
• Ciss, Typ, (pf): 6970
• Qg, Typ, (nc): 109
• Trr, Typ, (ns): 49
• Pd, (w): 360
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-263 (7-Lead)

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
280
240
200
160
120
1,000
200
180
160
140
120
100
80
40
80
60
40
20
100
0
0
0.4
3.0
0
0.5
f
3.5
5
= 1 MHz
Fig. 9. Forward Voltage Drop of
0.6
T
J
Fig. 7. Input Admittance
10
= 150ºC
4.0
Fig. 11. Capacitance
0.7
Intrinsic Diode
T
J
15
V
= 150ºC
GS
V
4.5
- 40ºC
0.8
V
SD
25ºC
DS
- Volts
- Volts
20
- Volts
0.9
5.0
T
J
25
= 25ºC
1.0
C iss
C oss
C rss
5.5
30
1.1
6.0
35
1.2
1.3
6.5
40
1,000
100
10
140
120
100
1
80
60
40
20
10
0
9
8
7
6
5
4
3
2
1
0
1
0
0
External Lead Limit
R
DS(
T
T
Single Pulse
Fig. 12. Forward-Bias Safe Operating Area
J
C
V
I
I
10
D
G
= 175ºC
20
DS
on
= 25ºC
= 100A
= 10mA
)
= 28V
Limit
20
40
Fig. 8. Transconductance
30
60
Fig. 10. Gate Charge
IXTA200N055T2-7
Q
40
G
80
I
- NanoCoulombs
D
V
DC, 100ms
DS
- Amperes
50
100
10
- Volts
60
120
70
140
T
J
80
= - 40ºC
IXYS REF: T_200N055T2(V5)3-06-08-B
150ºC
25ºC
160
90
180
100
25µs
100µs
1ms
10ms
200
110
100