IXFZ520N075T2 IXYS, IXFZ520N075T2 Datasheet

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IXFZ520N075T2

Manufacturer Part Number
IXFZ520N075T2
Description
TrenchT2 HiperFETs
Manufacturer
IXYS
Datasheet

Specifications of IXFZ520N075T2

Vdss, Max, (v)
75
Id(cont), Tc=25°c, (a)
465
Rds(on), Max, Tj=25°c, (?)
0.0013
Ciss, Typ, (pf)
41000
Qg, Typ, (nc)
545
Pd, (w)
600
Rthjc, Max, (k/w)
0.25
Package Style
DE475
TrenchT2
HiperFET
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
V
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
ISOL
ISOL
GS(th)
DS(on)
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
50/60 Hz, RMS
I
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
V
V
V
V
V
Test Conditions
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
TM
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
≤ 1mA
= 0V, I
= V
= ±20V, V
= V
= 10V, I
GigaMOS
GS
DSS
, I
D
, V
D
D
= 3mA
= 8mA
= 100A, Note 1
GS
DS
= 0V
= 0V
t = 1 minute
t = 1 second
GS
TM
= 1MΩ
Advance Technical Information
T
J
= 150°C
IXFZ520N075T2
JM
20..120 / 4.5..27
Min.
2.0
75
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
1560
2500
3000
2500
465
±20
±30
200
600
175
300
260
Typ.
75
75
3
3
±200 nA
Max.
4.0
1.5 mA
1.3 mΩ
10
N/lb.
V~
V~
V~
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
DE475
G = Gate
S = Source
Features
Advantages
Applications
D25
-
-
-
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Substrate
175°C Operating Temperature
Very High Current Handling
Fast Intrinsic Diode
Avalanche Rated
DC-DC Converters and Off-Line UPS
Primary-Side Switch
High Speed Power Switching
Applications
Capability
Very Low R
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
G
Excellent Thermal Transfer
Increased Temperature and Power
Cycling Capability
High Isolation Voltage
S
S
=
=
≤ ≤ ≤ ≤ ≤
DS(on)
Isolated Tab
D = Drain
75V
465A
1.3mΩ Ω Ω Ω Ω
DS100250(03/10)
(2500V~)
D
D
D

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IXFZ520N075T2 Summary of contents

Page 1

... GSS DSS DS DSS 10V 100A, Note 1 DS(on © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFZ520N075T2 TM Maximum Ratings 75 = 1MΩ ±20 ±30 465 1560 JM 200 3 600 -55 ... +175 175 -55 ... +175 2500 3000 300 260 2500 20 ...

Page 2

... I = 260A 177 DSS D 135 0.15 Characteristic Values Min. Typ 357 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFZ520N075T2 Max Ω 0.25 °C/W °C/W Max. 520 A 1600 A 1.25 V 150 6,404,065 B1 6,683,344 ...

Page 3

... J = 15V 10V 0.5 0.6 0.7 0.8 vs. Drain Current 500 400 T = 175ºC J 300 200 100 T = 25ºC J 200 250 300 350 IXFZ520N075T2 Fig. 2. Extended Output Characteristics @ 15V GS 10V 0.0 0.2 0.4 0.6 0.8 1.0 1 Volts DS Fig. 4. Normalized R vs. Junction Temperature DS(on) 2 10V GS 2 ...

Page 4

... T = 25º 0.7 0.8 0.9 1.0 10,000 C iss 1,000 100 C oss 10 C rss IXFZ520N075T2 Fig. 8. Transconductance 40º 100 120 I - Amperes D Fig. 10. Gate Charge V = 37. 260A 10mA G 0 100 200 300 Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area ...

Page 5

... V = 10V 37.5V DS 140 400 120 300 100 T = 125ºC J 200 80 100 60 40 140 160 180 200 IXFZ520N075T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 1Ω 10V 37. 125º 25º 100 120 140 ...

Page 6

... DE475 (IXFZ) Outline IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance Fig. 19. Maximum Transient Thermal Impedance .sadgsfgsf 0.001 0.01 Pulse Width - Seconds IXFZ520N075T2 0 IXYS REF: IXFZ520N075T2 (V9)3-03-10 10 ...

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