IXTQ60N10T IXYS, IXTQ60N10T Datasheet
IXTQ60N10T
Specifications of IXTQ60N10T
Related parts for IXTQ60N10T
IXTQ60N10T Summary of contents
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... GSS DSS DS DSS 10V 25A, Note 1 DS(on © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTQ60N10T Maximum Ratings 100 = 1MΩ 100 GS ± 180 JM 10 500 176 -55 ... +175 175 -55 ... +175 300 260 1.13/10 5.5 Characteristic Values Min. ...
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... I = 10A 15 DSS D 11 0.25 Characteristic Values Min. Typ 3.8 112 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTQ60N10T TO-3P (IXTQ) Outline Max 0.85 °C/W °C/W Max 240 A 1 6,404,065 B1 6,683,344 6,727,585 ...
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... 10V 1.4 1.6 1.8 2 2.2 2.4 = 30A Value vs 175º 25º 105 120 135 150 IXTQ60N10T Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) Junction Temperature 2 10V GS 2.4 I 2.0 1.6 1.2 0.8 0.4 -50 -25 ...
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... T = 25º 1.0 1.1 1.2 1.3 1 iss 0.1 C oss C rss 0. 0.00001 IXTQ60N10T Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge V = 50V 10A 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.0001 ...
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... GS 100 V = 50V 25º IXTQ60N10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 15Ω 10V 50V 25º 125º Amperes D Fig. 16. Resistive Turn-off Switching Times vs. ...