IXFA180N10T2 IXYS, IXFA180N10T2 Datasheet

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IXFA180N10T2

Manufacturer Part Number
IXFA180N10T2
Description
TrenchT2 HiperFETs
Manufacturer
IXYS
Datasheet

Specifications of IXFA180N10T2

Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
180
Rds(on), Max, Tj=25°c, (?)
0.006
Ciss, Typ, (pf)
10500
Qg, Typ, (nc)
185
Trr, Typ, (ns)
66
Pd, (w)
480
Rthjc, Max, (k/w)
0.31
Package Style
TO-263
TrenchT2
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
LRMS
DM
A
GSS
DSS
J
JM
stg
L
sold
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
Lead Current Limit, RMS
T
T
T
T
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque (TO-220)
TO-263
TO-220
V
V
V
V
V
Test Conditions
I
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C (Chip Capability)
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
= 0V, I
= V
= ± 20V, V
= V
= 10V, I
DM
HiperFET
GS
, V
DSS
, I
DD
D
, V
D
D
= 250μA
≤ V
= 250μA
= 50A, Notes 1, 2
GS
DS
= 0V
DSS
= 0V
, T
J
GS
≤ 175°C
= 1MΩ
TM
Preliminary Technical Information
T
J
= 150°C
JM
IXFA180N10T2
IXFP180N10T2
-55 ... +175
-55 ... +175
Characteristic Values
100
Min.
2.0
Maximum Ratings
1.13 / 10
100
100
±20
±30
180
120
450
750
480
175
300
260
2.5
3.0
Typ.
90
15
±100 nA
750
Nm/lb.in.
Max.
4.0
10
6 mΩ
V/ns
mJ
μA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
g
V
I
R
TO-263 AA (IXFA)
TO-220AB (IXFP)
G = Gate
S = Source
Features
Advantages
Applications
D25
International Standard Packages
Avalanche Rated
175°C Operating Temperature
High Current Handling Capability
Fast Intrinsic Rectifier
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
Low R
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
DS(on)
G
D S
= 100V
= 180A
≤ ≤ ≤ ≤ ≤
G
D
Tab = Drain
S
6mΩ Ω Ω Ω Ω
= Drain
D (Tab)
D (Tab)
DS100266A(09/10)

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IXFA180N10T2 Summary of contents

Page 1

... DSS DS DSS 10V 50A, Notes 1, 2 DS(on © 2010 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXFA180N10T2 TM IXFP180N10T2 Maximum Ratings 100 = 1MΩ 100 GS ±20 ±30 180 120 450 JM 90 750 ≤ 175° 480 -55 ... +175 175 -55 ...

Page 2

... DSS D D25 52 0.50 Characteristic Values Min. Typ 5.8 190 Kelvin test contact DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFA180N10T2 IXFP180N10T2 TO-263 Outline Max 0.31 °C/W °C/W Max. 180 A 720 A TO-220 Outline 1 ...

Page 3

... Value vs. D 140 120 T = 175ºC J 100 25º 200 240 280 320 360 IXFA180N10T2 IXFP180N10T2 Fig. 2. Extended Output Characteristics @ 15V GS 10V Volts DS Fig Normalized to I DS(on) Junction Temperature V = 10V GS -50 ...

Page 4

... T = 25º 0.9 1.0 1.1 1.2 1.3 1000 C iss 100 C oss 10 C rss IXFA180N10T2 IXFP180N10T2 Fig. 8. Transconductance 100 120 I - Amperes D Fig. 10. Gate Charge V = 50V 90A 10mA 100 Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area 100µ ...

Page 5

... T = 125º 25º 150 160 170 180 2 IXFA180N10T2 IXFP180N10T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 2Ω 10V 50V 25º 125º 100 110 120 130 140 I - Amperes D Fig ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXFA180N10T2 IXFP180N10T2 0.1 1 IXYS REF: IXF_180N10T2 (6V)01-02-09 10 ...

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