IXFT320N10T2 IXYS, IXFT320N10T2 Datasheet

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IXFT320N10T2

Manufacturer Part Number
IXFT320N10T2
Description
TrenchT2 HiperFETs
Manufacturer
IXYS
Datasheet

Specifications of IXFT320N10T2

Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
320
Rds(on), Max, Tj=25°c, (?)
0.0035
Ciss, Typ, (pf)
26000
Qg, Typ, (nc)
430
Trr, Typ, (ns)
98
Pd, (w)
1000
Rthjc, Max, (k/w)
0.15
Package Style
TO-268
TrenchT2
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
LRMS
DM
A
GSS
DSS
J
JM
stg
L
sold
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
TO-247
TO-268
Test Conditions
T
T
Continuous
Transient
T
Lead Current Limit, RMS
T
T
T
I
T
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C (Chip Capability)
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
= 0V, I
= V
= ± 20V, V
= V
= 10V, I
DM
HiperFET
GS
, V
DSS
, I
DD
D
, V
D
D
= 1mA
≤ V
= 250μA
= 100A, Notes 1 & 2
GS
DS
= 0V
DSS
= 0V
, T
J
GS
≤ 175°C
= 1MΩ
TM
Advance Technical Information
T
J
= 150°C
IXFH320N10T2
IXFT320N10T2
JM
100
Characteristic Values
Min.
2.0
-55 ... +175
-55 ... +175
Maximum Ratings
1.13 / 10
1000
± 20
± 30
100
100
320
160
800
160
175
300
260
Typ.
1.5
15
6
4
±200
Max.
1.75 mA
Nm/lb.in.
3.5 mΩ
4.0
25
V/ns
μA
°C
°C
°C
°C
°C
nA
W
V
V
V
V
A
A
A
A
V
V
g
g
J
V
I
R
TO-247 (IXFH)
TO-268 (IXFT)
G = Gate
S = Source
Features
Advantages
Applications
D25
Fast Intrinsic Diode
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Power Supplies
Applications
Low R
Easy to Mount
Space Savings
High Power Density
Synchronous Recification
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
DS(on)
DSS
G
DS(on)
D
= 100V
= 320A
≤ ≤ ≤ ≤ ≤
S
G
D
Tab = Drain
3.5mΩ Ω Ω Ω Ω
S
D (Tab)
D (Tab)
= Drain
DS100237(2/10)

Related parts for IXFT320N10T2

IXFT320N10T2 Summary of contents

Page 1

... DSS DS DSS 10V 100A, Notes 1 & 2 DS(on © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFH320N10T2 TM IXFT320N10T2 Maximum Ratings 100 = 1MΩ 100 GS ± 20 ± 30 320 160 800 JM 160 1.5 ≤ 175° 1000 -55 ... +175 175 -55 ... +175 ...

Page 2

... DSS D D25 125 0.21 Characteristic Values Min. Typ 6.6 320 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFH320N10T2 IXFT320N10T2 TO-247 (IXFH) Outline Max Ω Terminals Gate 3 - Source ns Dim. Millimeter nC Min ...

Page 3

... 15V GS 10V 1.4 1.6 1.8 2.0 2.2 2.4 = 160A D 180 160 140 120 100 250 300 350 400 IXFH320N10T2 IXFT320N10T2 Fig. 2. Extended Output Characteristics @ 15V GS 10V 0.0 0.5 1.0 1.5 2 Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 2 10V GS 2.4 2.0 1.6 1.2 0.8 0.4 -50 - ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions 150ºC J 25ºC - 40ºC 4.5 5.0 5.5 - Volts T = 25ºC J 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1,000 C iss C oss C rss Volts IXFH320N10T2 IXFT320N10T2 Fig. 8. Transconductance 240 40ºC J 200 25ºC 160 120 100 120 140 I - Amperes D Fig. 10. Gate Charge 50V DS 9 ...

Page 5

... 25º 140 160 180 200 IXFH320N10T2 IXFT320N10T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 1Ω 10V 50V 100 120 I - Amperes D Fig. 16. Resistive Turn-off Switching Times vs. ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance Fig. 19. Maximum Transient Thermal Impedance dfafas 0.001 0.01 Pulse Width - Seconds IXFH320N10T2 IXFT320N10T2 0.1 1 IXYS REF: F_320N10T2(98)02-01-10 10 ...

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