IXFH160N15T2 IXYS, IXFH160N15T2 Datasheet - Page 5

• Manufacturer Part Number: IXFH160N15T2
• Description: TrenchT2 HiperFETs
• Manufacturer: IXYS

Specifications of IXFH160N15T2

• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 160
• Rds(on), Max, Tj=25°c, (?): 0.009
• Ciss, Typ, (pf): 15000
• Qg, Typ, (nc): 253
• Pd, (w): 880
• Rthjc, Max, (k/w): 0.17
• Package Style: TO-247

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500
400
300
200
100
34
32
30
28
26
24
22
24
22
20
18
16
14
12
0
80
25
2
R
V
t
R
V
T
V
t
f
G
DS
DS
G
J
r
DS
Fig. 15. Resistive Turn-on Switching Times
35
Fig. 17. Resistive Turn-off Switching Times
= 2Ω, V
= 125ºC, V
= 2Ω , V
90
= 75V
= 75V
= 75V
4
T
GS
J
45
Fig. 13. Resistive Turn-on Rise Time
GS
= 25ºC, 125ºC
100
= 10V
t
t
GS
d(off)
= 10V
d(on)
6
= 10V
55
vs. Gate Resistance
- - - -
vs. Junction Temperature
- - - -
vs. Drain Current
110
T
J
R
- Degrees Centigrade
G
I
65
8
I
D
D
- Ohms
= 160A
- Amperes
120
I
75
I
D
D
10
= 80A
= 160A
130
85
12
140
95
I
D
= 80A
14
105
150
115
16
160
120
100
80
60
40
20
95
85
75
65
55
45
35
125
42
38
34
30
26
22
18
500
400
300
200
100
22
20
18
16
14
12
0
25
80
2
R
V
R
V
t
f
t
T
V
G
DS
G
DS
35
f
J
DS
Fig. 16. Resistive Turn-off Switching Times
= 2Ω , V
Fig. 18. Resistive Turn-off Switching Times
= 2Ω, V
= 125ºC, V
= 75V
= 75V
90
= 75V
4
I
D
I
45
D
= 80A, 160A
GS
Fig. 14. Resistive Turn-on Rise Time
= 160A
GS
t
= 10V
100
= 10V
t
d(off)
GS
d(off)
vs. Junction Temperature
55
6
= 10V
- - - -
vs. Gate Resistance
T
- - - -
J
- Degrees Centigrade
110
65
vs. Drain Current
I
D
R
8
- Amperes
G
- Ohms
I
75
D
IXFH160N15T2
120
= 80A
10
T
T
J
85
J
= 25ºC
= 125ºC
130
95
12
105
140
14
115
150
16
125
300
275
250
225
200
175
150
125
100
75
50
90
80
70
60
50
40
30
160