MMIX1F360N15T2 IXYS, MMIX1F360N15T2 Datasheet - Page 5

• Manufacturer Part Number: MMIX1F360N15T2
• Description: TrenchT2 HiperFETs
• Manufacturer: IXYS

Specifications of MMIX1F360N15T2

• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 235
• Rds(on), Max, Tj=25°c, (?): 0.0044
• Ciss, Typ, (pf): 47500
• Qg, Typ, (nc): 715
• Trr, Typ, (ns): -
• Trr, Max, (ns): 150
• Pd, (w): 680
• Rthjc, Max, (k/w): 0.22
• Package Style: SMPD

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100,000
10,000
1,000
200
180
160
140
120
100
350
300
250
200
150
100
100
50
80
60
40
20
0
0
2.5
0.2
0
f
= 1 MHz
0.3
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
3.0
0.4
10
Fig. 7. Input Admittance
3.5
0.5
Fig. 11. Capacitance
15
T
J
V
V
0.6
= 150ºC
V
SD
GS
DS
T
4.0
- Volts
- Volts
20
J
- Volts
= 150ºC
- 40ºC
0.7
25ºC
25
4.5
0.8
C iss
C oss
C rss
T
J
= 25ºC
30
0.9
5.0
35
1.0
5.5
1.1
40
1000
100
450
400
350
300
250
200
150
100
0.1
50
10
10
0
9
8
7
6
5
4
3
2
1
0
1
1
0
0
R
DS(on)
V
I
I
T
T
Single Pulse
D
G
DS
J
C
20
= 180A
= 10mA
= 175ºC
= 25ºC
100
= 75V
Limit
Fig. 12. Forward-Bias Safe Operating Area
40
200
Fig. 8. Transconductance
60
MMIX1F360N15T2
10
Fig. 10. Gate Charge
300
Q
80
G
I
- NanoCoulombs
D
V
- Amperes
DS
100
400
- Volts
120
500
100
140
T
600
J
25µs
100µs
1ms
10ms
100ms
DC
= - 40ºC
160
25ºC
150ºC
700
180
1,000
800
200