MMIX1F230N20T IXYS, MMIX1F230N20T Datasheet - Page 5

• Manufacturer Part Number: MMIX1F230N20T
• Description: Trench HiperFETs
• Manufacturer: IXYS

Specifications of MMIX1F230N20T

• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 168
• Rds(on), Max, Tj=25°c, (?): 0.0083
• Ciss, Typ, (pf): 28000
• Qg, Typ, (nc): 378
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 680
• Rthjc, Max, (k/w): 0.22
• Package Style: MMIX

© 2012 IXYS CORPORATION, All Rights Reserved
100,000
10,000
1,000
200
180
160
140
120
100
350
300
250
200
150
100
100
80
60
40
20
50
0
0
3.0
0
0
f
Fig. 9. Forward Voltage Drop of Intrinsic Diode
= 1 MHz
5
3.5
0.2
10
4.0
0.4
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
J
15
= 150ºC
V
4.5
0.6
GS
T
V
V
J
SD
DS
= 150ºC
- Volts
- Volts
20
- Volts
5.0
0.8
25
25ºC
T
J
= 25ºC
C oss
C rss
C iss
5.5
1
30
- 40ºC
6.0
1.2
35
6.5
1.4
40
1,000
280
240
200
160
120
100
80
40
10
10
0
9
8
7
6
5
4
3
2
1
0
1
0
0
1
T
T
Single Pulse
R
J
C
V
I
I
DS(on)
= 175ºC
D
G
20
DS
40
= 25ºC
= 115A
= 10mA
= 100V
Fig. 12. Forward-Bias Safe Operating Area
Limit
80
40
120
Fig. 8. Transconductance
60
10
Fig. 10. Gate Charge
MMIX1F230N20T
Q
T
160
J
80
G
= - 40ºC
I
- NanoCoulombs
D
V
DS
- Amperes
100
200
- Volts
25ºC
150ºC
240
120
100
280
140
160
320
25µs
100µs
1ms
180
360
1,000
400
200