IXTH50N25T IXYS, IXTH50N25T Datasheet - Page 6

• Manufacturer Part Number: IXTH50N25T
• Description: Trench MOSFETs
• Manufacturer: IXYS

Specifications of IXTH50N25T

• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.06
• Ciss, Typ, (pf): 4000
• Qg, Typ, (nc): 78
• Trr, Typ, (ns): 166
• Trr, Max, (ns): -
• Pd, (w): 400
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
38
34
30
26
22
18
14
26
25
24
23
22
21
20
19
30
28
26
24
22
20
18
16
25
2
15
t
T
V
r
J
DS
= 125ºC, V
35
4
= 125V
20
Switching Times vs. Gate Resistance
Switching Times vs. Drain Current
Rise Time vs. Junction Temperature
45
t
6
d(on)
GS
Fig. 17. Resistive Turn-off
= 15V
Fig. 15. Resistive Turn-on
25
- - - -
t
R
V
f
DS
G
Fig. 13. Resistive Turn-on
55
8
= 3.3Ω, V
= 125V
T
I
I
R
D
J
D
- Degrees Centigrade
G
- Amperes
I
30
= 50A
65
10
t
D
- Ohms
d(off)
= 25A, 50A
GS
T
I
J
D
= 15V
= 125ºC
- - - -
= 25A
75
T
12
J
35
= 25ºC
85
14
T
40
J
= 125ºC
R
V
95
T
16
DS
G
J
= 3.3Ω , V
= 25ºC
= 125V
45
105
18
GS
= 15V
115
20
50
25
23
21
19
17
15
13
66
62
58
54
50
46
42
38
125
100
28
27
26
25
24
23
22
21
20
19
18
90
80
70
60
50
40
30
20
10
26
25
24
23
22
21
20
25
2
15
R
V
t
T
V
DS
35
G
f
J
DS
Switching Times vs. Junction Temperature
4
= 3.3Ω , V
= 125ºC, V
= 125V
= 125V
Switching Times vs. Gate Resistance
20
45
6
t
GS
d(off)
Fig. 18. Resistive Turn-off
Fig. 16. Resistive Turn-off
GS
= 15V
55
T
Rise Time vs. Drain Current
IXTA50N25T IXTQ50N25T
IXTP50N25T IXTH50N25T
= 15V
25
J
- - - -
Fig. 14. Resistive Turn-on
8
- Degrees Centigrade
I
D
= 25A
R
65
G
I
D
10
- Ohms
- Amperes
30
t
R
V
f
G
DS
75
= 3.3Ω, V
T
= 125V
T
J
I
J
12
= 25ºC
D
= 125ºC
= 50A
85
35
t
d(off)
GS
I
14
D
= 15V
= 25A, 50A
95
- - - -
16
40
105
IXYS REF: T_50N25T(5G)01-26-10-A
18
115
45
20
125
220
200
180
160
140
120
100
80
60
40
62
60
58
56
54
52
50
48
46
44
42
50