IXFT120N25T IXYS, IXFT120N25T Datasheet - Page 4

• Manufacturer Part Number: IXFT120N25T
• Description: Trench HiperFETs
• Manufacturer: IXYS

Specifications of IXFT120N25T

• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 120
• Rds(on), Max, Tj=25°c, (?): 0.023
• Ciss, Typ, (pf): 11300
• Qg, Typ, (nc): 180
• Trr, Typ, (ns): 108
• Trr, Max, (ns): -
• Pd, (w): 890
• Rthjc, Max, (k/w): 0.14
• Package Style: TO-268

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
180
160
140
120
100
350
300
250
200
150
100
100
80
60
40
20
50
10
0
0
3.0
0.4
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.5
5
3.5
0.6
10
4.0
Fig. 7. Input Admittance
0.7
Fig. 11. Capacitance
T
15
J
V
V
= 125ºC
4.5
SD
DS
V
0.8
GS
- Volts
- Volts
20
- Volts
0.9
5.0
T
T
J
J
25
= 125ºC
= 25ºC
1.0
- 40ºC
25ºC
5.5
30
1.1
C iss
C oss
C rss
6.0
35
1.2
1.3
6.5
40
1000
180
160
140
120
100
100
10
10
80
60
40
20
9
8
7
6
5
4
3
2
1
0
1
0
0
0
1
Fig. 12. Forward-Bias Safe Operating Area @ T
V
I
I
T
T
Single Pulse
D
G
DS
J
C
20
20
= 60A
= 10mA
= 150ºC
= 25ºC
= 125V
R
DS(on)
40
40
Limit
Fig. 8. Transconductance
60
60
10
Fig. 10. Gate Charge
Q
G
- NanoCoulombs
I
V
D
80
80
CE
- Amperes
- Volts
100
100
IXFH120N25T
IXFT120N25T
120
120
100
T
J
= - 40ºC
125ºC
25ºC
140
140
C
25µs
100µs
1ms
= 25ºC
160
160
1000
180
180