IXTP60N28TM-A IXYS, IXTP60N28TM-A Datasheet - Page 4

• Manufacturer Part Number: IXTP60N28TM-A
• Description: Trench MOSFETs
• Manufacturer: IXYS

Specifications of IXTP60N28TM-A

• Vdss, Max, (v): 280
• Id(cont), Tc=25°c, (a): 18
• Rds(on), Max, Tj=25°c, (?): 0.058
• Ciss, Typ, (pf): 5070
• Qg, Typ, (nc): 84
• Trr, Typ, (ns): 170
• Trr, Max, (ns): -
• Pd, (w): 50
• Rthjc, Max, (k/w): 2.5
• Package Style: Overmolded TO-220

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
100
200
180
160
140
120
100
10
90
80
70
60
50
40
30
20
10
80
60
40
20
0
0
3.5
0.4
0
f
= 1 MHz
0.5
5
Fig. 9. Forward Voltage Drop of
4.0
10
0.6
Fig. 7. Input Admittance
Fig. 11. Capacitance
Intrinsic Diode
15
0.7
T
4.5
V
J
V
DS
= 125ºC
SD
V
GS
- Volts
- Volts
20
0.8
- Volts
T
J
5.0
= 125ºC
0.9
25
- 40ºC
25ºC
T
J
= 25ºC
1.0
30
C oss
C iss
C rss
5.5
1.1
35
1.2
6.0
40
1,000.0
100.0
10.0
1.0
0.1
120
110
100
90
80
70
60
50
40
30
20
10
10
10
0
9
8
7
6
5
4
3
2
1
0
0
0
R
Fig. 12. Forward-Bias Safe Operating Area
DS(on)
V
I
I
D
G
10
DS
10
= 30A
= 10mA
Limit
= 140V
20
20
Fig. 8. Transconductance
Fig. 10. Gate Charge
Q
30
30
T
G
J
V
I
- NanoCoulombs
IXTP60N28TM-A
D
= - 40ºC
DS
- Amperes
40
40
- Volts
100
25ºC
50
50
125ºC
60
60
IXYS REF: T_60N28T(6E)7-16-08
25µs
100µs
1ms
10ms
100ms
70
70
T
T
Single Pulse
J
C
= 150ºC
= 25ºC
80
80
1000
90
90