IXFT94N30T IXYS, IXFT94N30T Datasheet - Page 4

• Manufacturer Part Number: IXFT94N30T
• Description: Trench HiperFETs
• Manufacturer: IXYS

Specifications of IXFT94N30T

• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 94
• Rds(on), Max, Tj=25°c, (?): 0.036
• Ciss, Typ, (pf): 11400
• Qg, Typ, (nc): 190
• Trr, Typ, (ns): 155
• Trr, Max, (ns): -
• Pd, (w): 890
• Rthjc, Max, (k/w): 0.14
• Package Style: TO-268

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
180
160
140
120
100
300
250
200
150
100
100
80
60
40
20
50
10
0
0
3.0
0.4
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.5
3.5
5
0.6
4.0
10
Fig. 7. Input Admittance
0.7
T
Fig. 11. Capacitance
J
4.5
= 125ºC
15
V
V
SD
DS
V
0.8
GS
- Volts
- Volts
5.0
20
- Volts
T
0.9
J
= 125ºC
T
- 40ºC
J
5.5
25
25ºC
= 25ºC
1.0
6.0
30
1.1
C iss
C oss
C rss
6.5
35
1.2
1.3
7.0
40
1000
180
160
140
120
100
100
0.1
10
10
80
60
40
20
9
8
7
6
5
4
3
2
1
0
1
0
10
0
0
R
Fig. 12. Forward-Bias Safe Operating Area @ T
DS(on)
V
I
I
D
G
20
DS
20
= 47A
= 10mA
= 150V
Limit
40
40
Fig. 8. Transconductance
60
60
Fig. 10. Gate Charge
Q
80
G
- NanoCoulombs
I
V
D
80
CE
- Amperes
100
100
- Volts
100
120
120
IXFH94N30T
IXFT94N30T
140
T
J
= - 40ºC
25ºC
125ºC
25µs
100µs
1ms
140
160
C
= 25ºC
160
180
1000
200
180