IXTK120P20T IXYS, IXTK120P20T Datasheet - Page 4

• Manufacturer Part Number: IXTK120P20T
• Description: TrenchP Channel Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTK120P20T

• Vdss, Max, (v): -200
• Id(cont), Tc=25°c, (a): -120
• Rds(on), Max, Tj=25°c, (?): 0.030
• Ciss, Typ, (pf): 73000
• Qg, Typ, (nc): 740
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 1040
• Rthjc, Max, (k/w): 0.12
• Package Style: PLUS264

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
-300
-250
-200
-150
-100
-200
-180
-160
-140
-120
-100
100
-80
-60
-40
-20
-50
0
0
-3.4
-0.3
0
-0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
f
-5
= 1 MHz
-3.8
-0.5
-10
-0.6
Fig. 7. Input Admittance
-4.2
Fig. 11. Capacitance
T
-0.7
J
-15
= 125ºC
T
J
= 125ºC
V
V
-0.8
- 40ºC
V
GS
SD
25ºC
DS
-4.6
-20
- Volts
- Volts
- Volts
-0.9
T
-25
J
-1.0
= 25ºC
-5
C rss
C iss
C oss
-1.1
-30
-1.2
-5.4
-35
-1.3
-5.8
-1.4
-40
-
1,000
-
300
250
200
150
100
100
-10
-
50
10
-9
-8
-7
-6
-5
-4
-3
-2
-1
-
0
0
1
-
0
0
1
V
I
I
D
G
DS
T
T
Single Pulse
-20
J
C
= - 60A
= -1mA
R
= 150ºC
= -100V
= 25ºC
100
DS(on)
Fig. 12. Forward-Bias Safe Operating Area
-40
Limit
200
-60
Fig. 8. Transconductance
-
Fig. 10. Gate Charge
10
-80
Q
300
G
- NanoCoulombs
I
D
-100
V
- Amperes
DS
400
- Volts
-120
T
J
= - 40ºC
-140
IXTK120P20T
IXTX120P20T
-
500
25ºC
125ºC
100
DC
-160
600
100µs
1ms
10ms
100ms
-180
-200
700
-
1,000
-220