IXTT68P20T IXYS, IXTT68P20T Datasheet - Page 5

• Manufacturer Part Number: IXTT68P20T
• Description: TrenchP Channel Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTT68P20T

• Vdss, Max, (v): -200
• Id(cont), Tc=25°c, (a): -68
• Rds(on), Max, Tj=25°c, (?): 0.055
• Ciss, Typ, (pf): 33400
• Qg, Typ, (nc): 380
• Trr, Typ, (ns): 245
• Trr, Max, (ns): -
• Pd, (w): 568
• Rthjc, Max, (k/w): 0.22
• Package Style: TO-268

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240
200
160
120
40
35
30
25
20
15
10
50
40
30
20
10
80
40
5
0
0
-30
25
1
Fig. 15. Resistive Turn-on Switching Times vs.
Fig. 17. Resistive Turn-off Switching Times vs.
T
V
t
T
J
r
DS
J
35
-35
= 125ºC, V
2
= 125ºC
= -100V
Fig. 13. Resistive Turn-on Rise Time vs.
45
3
-40
GS
t
d(on)
= -10V
I
55
D
4
- - - -
Gate Resistance
= - 68A
-45
Junction Temperature
T
Drain Current
J
I
- Degrees Centigrade
D
65
R
- Amperes
5
T
G
J
- Ohms
= 25ºC
-50
75
6
I
I
I
-55
t
R
V
D
D
D
f
G
DS
85
= - 34A
= - 68A
= - 34A
= 1Ω, V
7
= -100V
-60
R
V
95
DS
GS
G
8
= 1Ω, V
t
= -100V
= -10V
d(off)
105
-65
- - - -
GS
9
= -10V
115
-70
10
240
200
160
120
80
40
0
135
130
125
120
115
110
105
100
95
125
180
160
140
120
100
35
30
25
20
15
10
80
60
40
20
60
50
40
30
20
10
0
-30
25
1
Fig. 16. Resistive Turn-off Switching Times vs.
Fig. 18. Resistive Turn-off Switching Times vs.
R
V
t
35
f
t
T
V
DS
G
R
V
f
J
DS
2
= 1Ω, V
DS
= 125ºC, V
G
-35
= -100V
= -100V
= 1Ω, V
= -100V
Fig. 14. Resistive Turn-on Rise Time vs.
45
3
GS
GS
-40
t
= -10V
t
d(off)
GS
d(off)
55
= -10V
Junction Temperature
= -10V
T
4
- - - -
J
- - - -
Gate Resistance
- Degrees Centigrade
65
-45
I
D
R
Drain Current
= - 34A
5
I
G
D
75
- Ohms
- Amperes
-50
6
85
I
7
-55
D
95
= - 68A
T
T
J
J
= 25ºC
= 125ºC
IXTT68P20T
IXTH68P20T
8
105
-60
I
I
I
D
D
D
= - 34A
= - 68A
= - 34A
115
9
-65
125
10
140
130
120
110
100
90
440
400
360
320
280
240
200
160
120
80
-70