IXTY10P15T IXYS, IXTY10P15T Datasheet

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IXTY10P15T

Manufacturer Part Number
IXTY10P15T
Description
TrenchP Channel Power MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of IXTY10P15T

Vdss, Max, (v)
-150
Id(cont), Tc=25°c, (a)
-10
Rds(on), Max, Tj=25°c, (?)
0.35
Ciss, Typ, (pf)
2210
Qg, Typ, (nc)
36
Trr, Typ, (ns)
120
Trr, Max, (ns)
-
Pd, (w)
83
Rthjc, Max, (k/w)
1.5
Package Style
TO-252
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
TrenchP
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
DSS
DGR
GSS
GSM
AS
D
J
JM
stg
L
SOLD
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
Test Conditions
V
V
V
V
V
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ± 15V, V
= V
= -10V, I
GS
DSS
, I
D
, V
D
= - 250μA
D
= - 250μA
GS
= 0.5 • I
DS
= 0V
= 0V
D25
GS
, Note 1
= 1MΩ
Advance Technical Information
T
J
= 125°C
JM
IXTA10P15T
IXTY10P15T
IXTP10P15T
-55 ... +150
-55 ... +150
-150
- 2.0
Characteristic Values
Min.
Maximum Ratings
1.13 / 10
-150
-150
+ 15
+ 25
0.35
2.50
3.00
- 30
200
150
300
260
-10
-10
83
Typ.
- 4.5
-100 μA
Nm/lb.in.
Max.
350 mΩ
±50 nA
- 3 μA
mJ
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
g
g
g
V
I
R
TO-252 (IXTY)
TO-263 AA (IXTA)
TO-220AB (IXTP)
G = Gate
S = Source
Features
Advantages
Applications
D25
Avalanche Rated
International Standard Packages
Extended FBSOA
Fast Intrinsic Diode
Low R
Easy to Mount
Space Savings
High Power Density
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
DS(on)
DSS
DS(ON)
G
D S
≤ ≤ ≤ ≤ ≤
=
=
G
G
and Q
D
Tab = Drain
S
S
D (Tab)
-150V
-10A
D (Tab)
= Drain
G
D (Tab)
350mΩ Ω Ω Ω Ω
DS100290(10/10)

Related parts for IXTY10P15T

IXTY10P15T Summary of contents

Page 1

... GSS DSS DS DSS -10V 0.5 • I DS(on © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTY10P15T IXTA10P15T IXTP10P15T Maximum Ratings -150 = 1MΩ -150 - -10 200 83 -55 ... +150 150 -55 ... +150 300 260 1. 0.35 2.50 3.00 Characteristic Values Min ...

Page 2

... L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.13 0 .005 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTY10P15T IXTA10P15T TO-252 Outline Max Pins Gate 3 - Source ns Dim. Millimeter ns Min. Max 2. 0. ...

Page 3

... J 2 -10V GS 2 1.8 1 1.4 1.2 1 0.8 0 0.4 -3 -3.5 -4 -4 vs. D -12 -10 = 25ºC -20 -25 -30 -35 IXTY10P15T IXTA10P15T Fig. 2. Extended Output Characteristics @ -10V -10 - Volts DS Fig Normalized to I DS(on) Junction Temperature V = -10V -10A D -50 - ...

Page 4

... T = 25º -0.8 -0.9 -1.0 -1.1 - 100 C iss - 10 C oss - C rss - 0.1 -25 -30 -35 -40 IXTY10P15T IXTA10P15T Fig. 8. Transconductance -10 - Amperes D Fig. 10. Gate Charge 75V -1mA NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area ...

Page 5

... R = 5Ω -10V 75V -8.5 -9 -9.5 -10 IXTY10P15T IXTA10P15T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 5Ω -10V 75V 25º 125º -5.5 -6 -6 Amperes D Fig. 16. Resistive Turn-off Switching Times vs. ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTY10P15T IXTA10P15T IXTP10P15T 0.1 1 IXYS REF: T_10P15T(A1)10-18-10 10 ...

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