IXTN210P10T IXYS, IXTN210P10T Datasheet - Page 5

• Manufacturer Part Number: IXTN210P10T
• Description: TrenchP Channel Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTN210P10T

• Vdss, Max, (v): -100
• Id(cont), Tc=25°c, (a): -210
• Rds(on), Max, Tj=25°c, (?): 0.0075
• Ciss, Typ, (pf): 69500
• Qg, Typ, (nc): 740
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 830
• Rthjc, Max, (k/w): 0.15
• Package Style: SOT-227

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120
110
100
90
80
70
60
50
40
350
300
250
200
150
100
90
80
70
50
-50
0
25
1
Fig. 17. Resistive Turn-off Switching Times vs.
Fig. 15. Resistive Turn-on Switching Times vs.
R
V
-55
T
V
t
G
DS
35
f
J
DS
= 1Ω, V
2
= 125ºC, V
= - 50V
= - 50V
Fig. 13. Resistive Turn-on Rise Time vs.
-60
45
GS
3
= -10V
GS
-65
t
d(off)
= -10V
55
T
4
Junction Temperature
J
- - - -
T
Gate Resistance
T
= 25ºC
Drain Current
J
-70
J
= 125ºC
I
- Degrees Centigrade
D
65
- Amperes
R
5
I
I
G
D
D
-75
I
- Ohms
D
= -100A
= - 50A
= -100A
75
6
-80
I
D
t
R
V
f
DS
85
= - 50A
G
= 1Ω, V
7
= - 50V
-85
95
GS
-90
8
t
= -10V
d(off)
105
-95
- - - -
9
115
-100
10
300
260
220
180
140
100
700
600
500
400
300
200
100
0
125
500
400
300
200
100
120
110
100
90
85
80
75
70
65
60
55
50
45
40
90
80
0
25
-50
1
Fig. 16. Resistive Turn-off Switching Times vs.
Fig. 18. Resistive Turn-off Switching Times vs.
t
R
V
R
V
T
V
f
DS
35
t
G
G
DS
-55
f
J
DS
= 1Ω, V
2
= 125ºC, V
= 1Ω, V
= - 50V
= - 50V
= - 50V
Fig. 14. Resistive Turn-on Rise Time vs.
45
-60
GS
GS
3
t
= -10V
= -10V
d(off)
GS
t
d(off)
55
Junction Temperature
= -10V
-65
T
4
- - - -
J
- - - -
Gate Resistance
- Degrees Centigrade
65
I
D
I
-70
= - 50A
R
D
Drain Current
5
I
G
= - 50A
D
T
- Ohms
75
- Amperes
J
T
J
= 125ºC
= 25ºC
-75
6
IXTN210P10T
85
I
-80
D
7
= -100A
95
-85
8
105
I
D
= -100A
-90
115
9
-95
125
10
1000
800
600
400
200
0
320
300
280
260
240
220
200
180
160
140
120
-100