IXTH140P10T IXYS, IXTH140P10T Datasheet - Page 4

• Manufacturer Part Number: IXTH140P10T
• Description: TrenchP Channel Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTH140P10T

• Vdss, Max, (v): -100
• Id(cont), Tc=25°c, (a): -140
• Rds(on), Max, Tj=25°c, (?): 0.012
• Ciss, Typ, (pf): 31400
• Qg, Typ, (nc): 400
• Trr, Typ, (ns): 130
• Trr, Max, (ns): -
• Pd, (w): 568
• Rthjc, Max, (k/w): 0.22
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
-350
-300
-250
-200
-150
-100
-200
-180
-160
-140
-120
-100
100
-80
-60
-40
-20
-50
0
0
-0.3
-3
0
-0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
f
-5
= 1 MHz
-0.5
-3.5
-0.6
-10
Fig. 7. Input Admittance
T
-0.7
-4
J
Fig. 11. Capacitance
= 125ºC
-15
T
J
-0.8
= 125ºC
V
V
- 40ºC
V
GS
SD
25ºC
DS
-4.5
-0.9
-20
- Volts
- Volts
- Volts
-1.0
T
J
-25
= 25ºC
-1.1
-5
C rss
C iss
C oss
-1.2
-30
-1.3
-5.5
-35
-1.4
-1.5
-40
-6
-
1,000
-
200
180
160
140
120
100
100
-10
-
80
60
40
20
10
-9
-8
-7
-6
-5
-4
-3
-2
-1
-
0
0
1
-
0
0
1
R
V
I
I
D
G
DS(on)
T
T
Single Pulse
-20
DS
J
C
= - 70A
= -1mA
= 150ºC
= 25ºC
= - 50V
50
Limit
Fig. 12. Forward-Bias Safe Operating Area
-40
100
-60
Fig. 8. Transconductance
-
Fig. 10. Gate Charge
10
-80
150
Q
G
- NanoCoulombs
I
D
-100
V
- Amperes
DS
200
T
- Volts
J
-120
= - 40ºC
250
25ºC
125ºC
DC
-140
IXTT140P10T
IXTH140P10T
-
100
25µs
100µs
1ms
10ms
100ms
-160
300
-180
350
-200
-
1,000
400
-220