IXTT140P10T IXYS, IXTT140P10T Datasheet

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IXTT140P10T

Manufacturer Part Number
IXTT140P10T
Description
TrenchP Channel Power MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of IXTT140P10T

Vdss, Max, (v)
-100
Id(cont), Tc=25°c, (a)
-140
Rds(on), Max, Tj=25°c, (?)
0.012
Ciss, Typ, (pf)
31400
Qg, Typ, (nc)
400
Trr, Typ, (ns)
130
Trr, Max, (ns)
-
Pd, (w)
568
Rthjc, Max, (k/w)
0.22
Package Style
TO-268

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTT140P10T
Manufacturer:
CYPRESS
Quantity:
1 001
TrenchP
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TO-247
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
TO-268
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±15V, V
= V
= -10V, I
DM
GS
DSS
, V
, I
, V
DD
D
D
= - 250μA
D
≤ V
= - 250μA
GS
DS
= 0.5 • I
= 0V
DSS
= 0V
, T
J
D25
GS
≤ 150°C
, Note 1
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
JM
IXTH140P10T
IXTT140P10T
-100
- 2.0
Min.
Characteristic Values
- 55 ... +150
- 55 ... +150
Maximum Ratings
1.13 / 10
- 400
-100
-100
-140
-140
Typ.
±15
±25
568
150
300
260
10
2
4
6
Max.
±100 nA
- 4.0
-150 μA
Nm/lb.in.
- 10 μA
12 mΩ
V/ns
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
V
g
g
J
V
I
R
TO-268 (IXTT)
TO-247 (IXTH)
G = Gate
S = Source
Features
Advantages
Applications
D25
Avalanche Rated
Low R
International Standard Packages
Extended FBSOA
Fast Intrinsic Diode
Easy to Mount
Space Savings
High Power Density
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
DS(on)
DSS
G
DS(ON)
D
≤ ≤ ≤ ≤ ≤
=
=
S
and Q
G
Tab = Drain
D
S
-100V
-140A
G
D
D
12mΩ Ω Ω Ω Ω
= Drain
(Tab)
(Tab)
DS100371A(11/11)

Related parts for IXTT140P10T

IXTT140P10T Summary of contents

Page 1

... GSS DSS DS DSS -10V 0.5 • I DS(on © 2011 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXTT140P10T IXTH140P10T Maximum Ratings -100 = 1MΩ -100 GS ±15 ±25 -140 - 400 JM -140 2 ≤ 150° 568 - 55 ... +150 150 - 55 ... +150 300 260 1 ...

Page 2

... DSS D D25 100 0.21 Characteristic Values Min. Typ. JM 130 650 -10 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTT140P10T IXTH140P10T TO-268 Outline Max Terminals Gate Source 0.22 °C/W °C/W Max. -140 A TO-247 Outline - 560 A -1 ...

Page 3

... Junction Temperature 2 -10V 2 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -160 -140 -120 -100 -80 -60 -40 -20 0 -50 - Degrees Centigrade J IXTT140P10T IXTH140P10T = 25ºC J -15 - 70A vs 140A 70A D 75 100 125 150 75 100 125 150 ...

Page 4

... Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area R Limit DS(on) 100 - 150º 25ºC C Single Pulse - Volts DS IXTT140P10T IXTH140P10T 25ºC 125ºC -140 -160 -180 -200 -220 250 300 350 400 25µs 100µs 1ms 10ms 100ms DC - 100 - 1,000 ...

Page 5

... Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance d(off 125º -10V -100V 70A Ohms G IXTT140P10T IXTH140P10T T = 125º 25ºC J -110 -120 -130 -140 140 120 70A D 100 140A 70A 105 ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTT140P10T IXTH140P10T 0.1 1 IXYS REF: T_140P10T(A8)8-16-11 10 ...

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