IXXH30N60B3D1 IXYS, IXXH30N60B3D1 Datasheet - Page 3

• Manufacturer Part Number: IXXH30N60B3D1
• Description: XPT 600V
• Manufacturer: IXYS

Specifications of IXXH30N60B3D1

• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 60
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 30
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.85
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 125
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 0.7
• Rthjc, Max, Igbt (c/w): 0.55
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 30
• Rthjc, Max, Diode (k/w): 0.90
• Package Style: TO-247

© 2011 IXYS CORPORATION, All Rights Reserved
50
45
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
5
0
8
7
6
5
4
3
2
1
5
0
0
8
0
Fig. 3. Output Characteristics @ T
0.5
Fig. 1. Output Characteristics @ T
9
0.5
Fig. 5. Collector-to-Emitter Voltage vs.
12A
10
1
Gate-to-Emitter Voltage
1
24A
V
1.5
CE
V
11
V
CE
GE
- Volts
- Volts
1.5
- Volts
I
C
V
= 48A
12
2
V
GE
GE
= 15V
= 15V
14V
13V
14V
13V
12V
2
2.5
13
J
J
= 150ºC
= 25ºC
T
2.5
J
14
3
= 25ºC
12V
11V
10V
9V
8V
7V
11V
10V
9V
8V
7V
5V
3.5
15
3
120
100
60
50
40
30
20
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0
0
-50
4
0
Fig. 2. Extended Output Characteristics @ T
V
GE
-25
5
= 15V
5
0
Fig. 4. Dependence of V
6
Fig. 6. Input Admittance
10
Junction Temperature
25
T
J
IXXH30N60B3D1
7
- Degrees Centigrade
V
CE
T
V
50
J
GE
15
- Volts
= 150ºC
8
- Volts
25ºC
75
V
I
I
I
GE
C
C
C
20
9
= 48A
= 24A
= 12A
= 15V
CE(sat)
100
10
14V
on
125
25
- 40ºC
13V
J
12V
= 25ºC
11
150
11V
10V
30
9V
8V
6V
175
12