IXXN100N60B3H1 IXYS, IXXN100N60B3H1 Datasheet - Page 6

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IXXN100N60B3H1

Manufacturer Part Number
IXXN100N60B3H1
Description
XPT 600V
Manufacturer
IXYS
Datasheet

Specifications of IXXN100N60B3H1

Vces, (v)
600
Ic25, Tc = 25°c, Igbt, (a)
170
Ic90, Tc = 90°c, Igbt, (a)
100
Ic110, Tc = 110°c, Igbt, (a)
-
Vce(sat), Typ, Tj = 25°c, Igbt (v)
1.80
Tfi, Typ, Tj = 25°c, Igbt, (ns)
150
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
2.8
Rthjc, Max, Igbt (c/w)
0.25
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
50
Rthjc, Max, Diode (k/w)
0.42
Package Style
SOT-227
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
180
160
140
120
100
80
60
40
20
180
160
140
120
100
0
80
60
40
20
25
2
Fig. 21. Inductive Turn-on Switching Times vs.
Fig. 19. Inductive Turn-on Switching Times vs.
R
V
t
T
V
t
r i
G
CE
3
r i
J
CE
= 2
= 150ºC, V
= 360V
= 360V
4
50
, V
GE
5
GE
= 15V
t
d(on)
t
Junction Temperature
d(on)
= 15V
6
T
J
- - - -
Gate Resistance
- Degrees Centigrade
- - - -
75
7
R
G
I
I
- Ohms
C
C
8
= 50A
= 100A
9
100
I
10
C
= 100A
11
I
C
= 50A
12
125
13
14
15
150
84
76
68
60
52
44
36
28
20
37
36
35
34
33
32
31
30
29
28
140
120
100
80
60
40
20
0
20
Fig. 20. Inductive Turn-on Switching Times vs.
t
R
V
r i
CE
G
30
= 2
= 360V
, V
GE
40
t
= 15V
d(on)
Collector Current
T
50
- - - -
J
= 150ºC, 25ºC
IXXN100N60B3H1
I
C
60
- Amperes
70
80
90
100
38
36
34
32
30
28
26
24

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