IXXX100N60B3H1 IXYS, IXXX100N60B3H1 Datasheet - Page 4

• Manufacturer Part Number: IXXX100N60B3H1
• Description: XPT 600V
• Manufacturer: IXYS

Specifications of IXXX100N60B3H1

• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 200
• Ic90, Tc = 90°c, Igbt, (a): 100
• Ic110, Tc = 110°c, Igbt, (a): -
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.80
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 150
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 2.8
• Rthjc, Max, Igbt (c/w): 0.18
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 65
• Rthjc, Max, Diode (k/w): 0.30
• Package Style: PLUS247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1000
1,000
100
0.1
100
10
80
70
60
50
40
30
20
10
10
1
0
1
0
0
V
CE(sat)
f
T
T
Single Pulse
= 1 MHz
J
C
20
= 150ºC
= 25ºC
External Lead Limit
Limit
5
Fig. 11. Forward-Bias Safe Operating Area
40
10
60
Fig. 7. Transconductance
10
Fig. 9. Capacitance
15
80
V
DS
I
V
C
CE
- Amperes
- Volts
100
- Volts
20
120
25
100
C oes
C res
C ies
140
T
30
J
= - 40ºC
160
25ºC
150ºC
35
180
DC
25µs
100µs
1ms
10ms
200
40
1000
0.001
220
200
180
160
140
120
100
0.01
80
60
40
20
16
14
12
10
0.1
0.00001
8
6
4
2
0
0
1
100
0
Fig. 12. Maximum Transient Thermal Impedance
T
R
dv / dt < 10V / ns
V
I
I
150
J
G
C
G
CE
= 150ºC
= 2
= 70A
= 10mA
= 300V
20
Ω
Fig. 10. Reverse-Bias Safe Operating Area
200
0.0001
250
40
Fig. 8. Gate Charge
300
Pulse Width - Second
Q
0.001
G
60
- NanoCoulombs
V
350
CE
- Volts
IXXK100N60B3H1
IXXX100N60B3H1
80
400
0.01
450
100
500
0.1
120
550
600
140
1
650