IXYH40N90C3D1 IXYS, IXYH40N90C3D1 Datasheet

no-image

IXYH40N90C3D1

Manufacturer Part Number
IXYH40N90C3D1
Description
XPT 900V
Manufacturer
IXYS
Datasheet

Specifications of IXYH40N90C3D1

Vces, (v)
900
Ic25, Tc = 25°c, Igbt, (a)
90
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
40
Vce(sat), Typ, Tj = 25°c, Igbt (v)
2.5
Tfi, Typ, Tj = 25°c, Igbt, (ns)
110
Eoff, Typ, Tj = 125°c, Igbt (mj)
1.2
Eoff, Typ, Tj = 150°c, Igbt (mj)
-
Rthjc, Max, Igbt (c/w)
0.25
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
25
Rthjc, Max, Diode (k/w)
0.90
Package Style
TO-247
900V XPT
GenX3
High-Speed IGBT
for 20-50 kHz Switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
V
© 2012 IXYS CORPORATION, All Rights Reserved
C25
C110
F110
CM
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
Clamped Inductive Load
Test Conditions
T
T
Continuous
Transient
T
T
T
T
V
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
C
GE
CE
CE
w/ Diode
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 110°C
= 110°C
= 25°C, 1ms
= 25°C
= 15V, T
TM
= 250μA, V
= V
= 0V, V
= 40A, V
= 250μA, V
CES
IGBT
, V
GE
VJ
GE
GE
= ±20V
= 125°C, R
= 0V
CE
= 15V, Note 1
GE
= V
= 0V
GE
GE
= 1MΩ
G
= 5Ω
Advance Technical Information
T
T
J
J
= 150°C
= 125°C
IXYH40N90C3D1
Min.
950
Characteristic Values
3.5
@V
-55 ... +150
-55 ... +150
Maximum Ratings
CE
I
1.13/10
CM
Typ.
2.9
2.2
= 80
±20
±30
180
V
500
150
300
260
900
900
90
40
25
CES
6
±100
Max.
750
Nm/lb.in.
2.5
5.5
25
μA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
A
V
V
V
g
V
I
V
t
TO-247 AD
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Anti-Parallel Ultra Fast Diode
High Current Handling Capability
International Standard Package
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Vce(sat)
CES
CE(sat)
G
C
E
= 900V
= 40A
= 110ns
≤ ≤ ≤ ≤ ≤ 2.5V
C
Tab = Collector
Tab
= Collector
DS100441(2/12)

Related parts for IXYH40N90C3D1

IXYH40N90C3D1 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 40A 15V, Note 1 CE(sat © 2012 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXYH40N90C3D1 Maximum Ratings 900 = 1MΩ 900 GE ±20 ± 180 = 5Ω ≤ CES 500 -55 ...

Page 2

... J /dt = 100A/μ 100° 100°C 100 J (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXYH40N90C3D1 TO-247 (IXYH) Outline Max Terminals Gate 3 - Emitter mJ Dim. Millimeter ns Min. Max ...

Page 3

... 15V GE 13V 12V 11V 10V 3 25º 80A IXYH40N90C3D1 Fig. 2. Extended Output Characteristics @ 15V GE 14V Volts CE Fig. 4. Dependence of V Junction Temperature 2 15V GE 2.0 1 80A C 1.6 1 1.2 1.0 0.8 0.6 ...

Page 4

... C ies oes res Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXYH40N90C3D1 Fig. 8. Gate Charge V = 450V 40A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125ºC ...

Page 5

... 15V G GE 160 V = 450V CE 140 120 120 T = 125º 100 IXYH40N90C3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 450V 125º Amperes C Fig. 15. Inductive Turn-off Switching Times vs. ...

Page 6

... I = 80A 40A 100 125 IXYH40N90C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 450V CE 25ºC ≤ T ≤ 125º Amperes C ...

Page 7

... I = 30A 60A 30A 15A 160 0 200 400 600 -di /dt F Fig. 25. Recovery Time t rr 0.01 0.1 t IXYH40N90C3D1 60A 30A 15A 100°C = 30A 5 0 1000 0 200 400 A/μs /dt Fig. 23. Peak Reverse Current I r Versus -di ...

Related keywords