IXA12IF1200PC IXYS, IXA12IF1200PC Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/3/352/ixys_sml.jpg)
IXA12IF1200PC
Manufacturer Part Number
IXA12IF1200PC
Description
XPT 1200V
Manufacturer
IXYS
Datasheet
1.IXA12IF1200PC.pdf
(6 pages)
Specifications of IXA12IF1200PC
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
20
Ic90, Tc = 90°c, Igbt, (a)
13
Ic110, Tc = 110°c, Igbt, (a)
-
Vce(sat), Typ, Tj = 25°c, Igbt (v)
1.8
Tfi, Typ, Tj = 25°c, Igbt, (ns)
100
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
1.1
Rthjc, Max, Igbt (c/w)
1.50
If, Tc = 90°c, Diode (a)
14
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
1.80
Package Style
TO-263
Symbol
I
I
V
Q
I
t
E
R
Symbol
V
R
V
R
R
R
R
R
τ
τ
τ
τ
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Diode
Equivalent Circuits for Simulation
F25
F
RM
rr
1
2
3
4
rec(off)
thJC
100
F
0
0
0
0
1
2
3
4
rr
I
V
R1
0
C1
Definition
Forward current
Forward voltage
Reverse recovery charge
Maximum reverse recovery current
Reverse recovery time
Reverse recovery losses at turn-off
Thermal resistance juntion to case
Definition
IGBT
Diode
R
0
R2
C2
R3
C3
R4
T = 25°C
T =
V =
di /dt = -
I =
Conditions
I =
C4
F
F
C
C
R
F
100
10
10
600
Data according to IEC 60747and per diode unless otherwise specified
A
A
°C
V
250
A/µs;
T
T
T
T
T
VJ
VJ
VJ
VJ
VJ
= 25°C
=
=
=
=
125
125
150
150
°C
°C
°C
°C
IXA12IF1200PC
min.
min.
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
IGBT
Ratings
Ratings
typ.
typ.
1.95
1.95
10.5
0.35
350
1.3
max.
max.
preliminary
1.25
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
153
2.2
1.8
1.1
Diode
22
14
85
20110330a
Unit
K/W
Unit
m
m
mJ
µC
ns
Ω
Ω
A
A
V
V
A
V
V