IXYH50N120C3D1 IXYS, IXYH50N120C3D1 Datasheet

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IXYH50N120C3D1

Manufacturer Part Number
IXYH50N120C3D1
Description
XPT 1200V
Manufacturer
IXYS
Datasheet

Specifications of IXYH50N120C3D1

Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
105
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
50
Vce(sat), Typ, Tj = 25°c, Igbt (v)
3.0
Tfi, Typ, Tj = 25°c, Igbt, (ns)
57
Eoff, Typ, Tj = 125°c, Igbt (mj)
1.47
Eoff, Typ, Tj = 150°c, Igbt (mj)
-
Rthjc, Max, Igbt (c/w)
0.20
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
25
Rthjc, Max, Diode (k/w)
0.90
Package Style
TO-247

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXYH50N120C3D1
Manufacturer:
SANKEN
Quantity:
30 000
1200V XPT
GenX3
High-Speed IGBT
for 20-50 kHz Switching
Symbol
V
V
V
V
I
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
C110
F110
CM
A
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
Clamped Inductive Load
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
T
V
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
C
C
C
GE
CE
CE
w/ Diode
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 110°C
= 110°C
= 25°C, 1ms
= 25°C
= 25°C
= 25°C
= 15V, T
= 250μA, V
= V
= 0V, V
= 50A, V
= 250μA, V
TM
CES
, V
IGBT
GE
VJ
GE
GE
= ±20V
= 125°C, R
= 0V
CE
= 15V, Note 1
GE
= V
= 0V
GE
GE
= 1MΩ
G
= 5Ω
Advance Technical Information
T
T
J
J
= 125°C
= 125°C
IXYH50N120C3D1
1200
Min.
Characteristic Values
3.0
@V
-55 ... +150
-55 ... +150
Maximum Ratings
I
CE
CM
1.13/10
Typ.
3.2
= 100
2.5
1200
1200
105
750
±20
±30
230
V
625
150
300
260
50
25
40
CES
6
±100
Max.
500
Nm/lb.in.
3.0
5.0
50
mJ
μA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
A
A
V
V
V
g
V
I
V
t
TO-247 AD
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Anti-Parallel Ultra Fast Diode
Avalanche Rated
High Current Handling Capability
International Standard Package
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Vce(sat)
CES
CE(sat)
G
C
E
= 1200V
= 50A
= 57ns
≤ ≤ ≤ ≤ ≤ 3.0V
C
Tab = Collector
Tab
= Collector
DS100388(09/11)

Related parts for IXYH50N120C3D1

IXYH50N120C3D1 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 50A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXYH50N120C3D1 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ±30 105 50 25 230 40 750 = 5Ω 100 G CM ≤ ...

Page 2

... J /dt = 100A/μ 100° 100°C 100 J (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXYH50N120C3D1 TO-247 (IXYH) Outline Max Terminals Gate 3 - Emitter mJ Dim. Millimeter ns Min. Max ...

Page 3

... J = 15V GE 13V 11V 10V 3.5 4 4.5 5 5.5 6 100 T = 25º IXYH50N120C3D1 Fig. 2. Extended Output Characteristics @ 15V GE 13V 12V 11V 10V Volts CE Fig. 4. Dependence of V Junction Temperature 2 15V GE 2.0 1 100A C 1.6 1.4 1.2 1.0 0.8 ...

Page 4

... C ies oes res 200 Fig. 11. Maximum Transient Thermal Impedance 0.001 Pulse Width - Second IXYH50N120C3D1 Fig. 8. Gate Charge V = 600V 50A 10mA 100 Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125ºC J Ω ...

Page 5

... Ω 15V G GE 320 V = 600V CE 120 300 100 280 260 80 240 60 220 40 200 180 IXYH50N120C3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 600V 125º ...

Page 6

... I = 40A 80A 40A 100 125 IXYH50N120C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on) Ω 15V 600V 125º Amperes C 34 ...

Page 7

... 60A 30A 15A 160 0 200 400 600 -di /dt F Fig. 25. Recovery Time t rr 0.01 0.1 t IXYH50N120C3D1 100° 300V 60A 30A 15A 1000 0 200 400 A/μs /dt Fig. 23. Peak Reverse Current I ...

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