IXYN100N120C3H1 IXYS, IXYN100N120C3H1 Datasheet - Page 3

• Manufacturer Part Number: IXYN100N120C3H1
• Description: XPT 1200V
• Manufacturer: IXYS

Specifications of IXYN100N120C3H1

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 134
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 62
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 3.5
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 110
• Eoff, Typ, Tj = 125°c, Igbt (mj): 3.55
• Eoff, Typ, Tj = 150°c, Igbt (mj): -
• Rthjc, Max, Igbt (c/w): 0.18
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 42
• Rthjc, Max, Diode (k/w): 0.42
• Package Style: SOT-227

© 2011 IXYS CORPORATION, All Rights Reserved
200
180
160
140
120
100
200
180
160
140
120
100
8.5
7.5
6.5
5.5
4.5
3.5
2.5
1.5
80
60
40
20
80
60
40
20
0
0
0
0
6
0.5
7
1
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
Fig. 5. Collector-to-Emitter Voltage vs.
1
8
2
1.5
Gate-to-Emitter Voltage
9
2
3
V
V
10
V
2.5
V
CE
CE
GE
GE
- Volts
- Volts
V
- Volts
= 15V
4
I
GE
C
13V
12V
11V
10V
3
11
= 15V
= 200A
100A
13V
12V
11V
10V
50A
3.5
5
12
J
4
J
= 125ºC
6
= 25ºC
13
4.5
T
J
= 25ºC
14
7
9V
8V
7V
6V
5
9V
8V
7V
6V
5V
5.5
15
8
300
250
200
150
100
200
180
160
140
120
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50
80
60
40
20
0
0
-50
3.5
0
V
Fig. 2. Extended Output Characteristics @ T
GE
V
GE
= 15V
-25
13V
12V
= 15V
4.5
5
Fig. 4. Dependence of V
0
Fig. 6. Input Admittance
IXYN100N120C3H1
Junction Temperature
5.5
11V
T
J
25
- Degrees Centigrade
10
V
V
CE
GE
10V
6.5
50
- Volts
- Volts
I
C
I
= 200A
C
I
= 100A
C
15
= 50A
75
CE(sat)
7.5
T
9V
J
100
on
= - 40ºC
125ºC
20
25ºC
8.5
J
= 25ºC
125
8V
7V
6V
150
9.5
25